STMicroelectronics STGW80H65DFB IGBT, 120 A 650 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 792-5814
- Référence fabricant:
- STGW80H65DFB
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
5,29 €
(TVA exclue)
6,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 4 | 5,29 € |
| 5 - 9 | 5,02 € |
| 10 - 24 | 4,52 € |
| 25 - 49 | 4,07 € |
| 50 + | 3,88 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 792-5814
- Référence fabricant:
- STGW80H65DFB
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Maximum Continuous Collector Current | 120 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 469 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.75 x 5.15 x 20.15mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Maximum Continuous Collector Current 120 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 469 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.75 x 5.15 x 20.15mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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