Infineon, Type N-Channel IGBT, 85 A 650 V, 3-Pin TO-247, Through Hole
- N° de stock RS:
- 215-6633
- Référence fabricant:
- IGW30N65L5XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 30 unités)*
63,00 €
(TVA exclue)
76,20 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 30 | 2,10 € | 63,00 € |
| 60 - 120 | 1,995 € | 59,85 € |
| 150 - 270 | 1,911 € | 57,33 € |
| 300 - 570 | 1,827 € | 54,81 € |
| 600 + | 1,701 € | 51,03 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-6633
- Référence fabricant:
- IGW30N65L5XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 85A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 227W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Series | LowVCE(sat) Fifth Generation | |
| Standards/Approvals | Pb-free lead plating, RoHS, JEDEC | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 85A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 227W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Series LowVCE(sat) Fifth Generation | ||
Standards/Approvals Pb-free lead plating, RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon fifth generation insulated-gate bipolar transistor with low saturation voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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