Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V Enhancement, 3-Pin TO-247

N° de stock RS:: 919-4918
Référence fabricant:: IRFP3710PBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V Enhancement, 3-Pin TO-247

Sous-total (1 tube de 25 unités)*

78,30 €

(TVA exclue)

94,75 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

400 unité(s) expédiée(s) à partir du 31 août 2026
Plus 400 unité(s) expédiée(s) à partir du 03 décembre 2026
Plus 400 unité(s) expédiée(s) à partir du 25 février 2027

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Unité	Prix par unité	le tube*
25 +	3,132 €	78,30 €

*Prix donné à titre indicatif

N° de stock RS:: 919-4918
Référence fabricant:: IRFP3710PBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	57A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	25mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	190nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	200W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	20.3mm
	Length	15.9mm
	Width	5.3mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 57A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 25mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 190nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 200W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 20.3mm
	Length 15.9mm
	Width 5.3mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 57A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRFP3710PBF

This MOSFET is designed for efficient power management in a variety of electronic applications. It features an N-channel configuration and handles high continuous drain current, ensuring effective performance even at elevated temperatures and exhibiting low on-resistance, making it suitable for industrial environments.

Features & Benefits

• High continuous drain current capability supports strong performance

• Maximum drain-source voltage of 100V increases versatility

• Low RDS(on) of 25mΩ minimises energy loss during operation

• High power dissipation capacity of 200W enables effective energy management

• Enhancement mode transistor allows for control over switching operations

• TO-247AC package facilitates easy integration in through-hole applications

Applications

• Ideal for power supply circuits

• Commonly found in motor control systems

• Suitable for automotive power management solutions

• Utilised in battery management systems

What is the maximum temperature for this device to operate?

The maximum operating temperature reaches up to +175°C, allowing efficient function in high-temperature environments.

How does this device handle high currents?

It supports a continuous drain current of 57A, enabling it to power high-demand applications without failure.

Can it be used in a through-hole design?

Yes, the TO-247AC package allows for through-hole mounting, simplifying integration into various circuit boards.

What kind of load can this MOSFET switch?

This device can manage significant loads due to its high power dissipation of 200W, suitable for heavy-duty applications.

Is it compatible with standard gate voltages?

Yes, it operates effectively with a gate threshold voltage between 2V and 4V, ensuring compatibility with various drive circuits.