Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V Enhancement, 3-Pin TO-220 IRF3710PBF
- N° de stock RS:
- 540-9812
- Numéro d'article Distrelec:
- 302-84-009
- Référence fabricant:
- IRF3710PBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
2,12 €
(TVA exclue)
2,57 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 1 unité(s) expédiée(s) à partir du 31 août 2026
- Plus 139 unité(s) expédiée(s) à partir du 31 août 2026
- Plus 43 unité(s) expédiée(s) à partir du 04 septembre 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 2,12 € |
| 10 - 49 | 1,80 € |
| 50 - 99 | 1,69 € |
| 100 - 249 | 1,57 € |
| 250 + | 1,46 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 540-9812
- Numéro d'article Distrelec:
- 302-84-009
- Référence fabricant:
- IRF3710PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.69mm | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.69mm | ||
Length 10.54mm | ||
Height 8.77mm | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
Infineon HEXFET Series MOSFET, 57A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF3710PBF
This MOSFET is a durable power semiconductor that is essential in various electronic applications. It is designed for high efficiency, excelling in settings that require low resistance and superior thermal performance, making it important for contemporary electronics in fields such as automation and mechanical systems.
Features & Benefits
• Utilises HEXFET technology for low on-resistance
• Handles a maximum continuous drain current of 57A
• Functions effectively within a drain-source voltage of 100V
• Enables fast switching capabilities to enhance overall performance
• Designed for operation at a maximum junction temperature of +175°C
• Optimised for thermal management with minimal heat generation
Applications
• Utilised in automotive power systems for efficient energy management
• Suitable for power supply circuits to enhance energy efficiency
• Applicable in motor control systems for high current scenarios
• Effective in industrial automation for consistent performance under load
What is the significance of the low on-resistance in this MOSFET?
Low on-resistance reduces power losses and enhances efficiency, which is crucial for high-performance applications.
Can it be used in high-temperature environments?
Yes, it operates effectively up to a maximum junction temperature of +175°C, fitting for challenging applications.
How does the gate threshold voltage affect operation?
The gate threshold voltage of 2V to 4V ensures effective switching, allowing for precise control in various circuit designs.
What type of mounting is suitable for this device?
This MOSFET is intended for through-hole mounting, facilitating secure installation in numerous applications.
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
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- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-247 IRFP3710PBF
- Infineon HEXFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-247 IRFP4332PBF
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- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 3-Pin TO-220