Infineon HEXFET Type N-Channel MOSFET, 57 A, 100 V Enhancement, 3-Pin TO-247 IRFP3710PBF
- N° de stock RS:
- 541-1584
- Numéro d'article Distrelec:
- 303-41-352
- Référence fabricant:
- IRFP3710PBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
4,75 €
(TVA exclue)
5,75 €
(TVA incluse)
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- Plus 13 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 4,75 € |
| 5 - 9 | 4,28 € |
| 10 - 14 | 3,82 € |
| 15 - 19 | 3,59 € |
| 20 + | 3,31 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 541-1584
- Numéro d'article Distrelec:
- 303-41-352
- Référence fabricant:
- IRFP3710PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 57A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 190nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.3mm | |
| Length | 15.9mm | |
| Height | 20.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 57A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 190nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.3mm | ||
Length 15.9mm | ||
Height 20.3mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 57A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRFP3710PBF
This MOSFET is designed for efficient power management in a variety of electronic applications. It features an N-channel configuration and handles high continuous drain current, ensuring effective performance even at elevated temperatures and exhibiting low on-resistance, making it suitable for industrial environments.
Features & Benefits
• High continuous drain current capability supports strong performance
• Maximum drain-source voltage of 100V increases versatility
• Low RDS(on) of 25mΩ minimises energy loss during operation
• High power dissipation capacity of 200W enables effective energy management
• Enhancement mode transistor allows for control over switching operations
• TO-247AC package facilitates easy integration in through-hole applications
Applications
• Ideal for power supply circuits
• Commonly found in motor control systems
• Suitable for automotive power management solutions
• Utilised in battery management systems
What is the maximum temperature for this device to operate?
The maximum operating temperature reaches up to +175°C, allowing efficient function in high-temperature environments.
How does this device handle high currents?
It supports a continuous drain current of 57A, enabling it to power high-demand applications without failure.
Can it be used in a through-hole design?
Yes, the TO-247AC package allows for through-hole mounting, simplifying integration into various circuit boards.
What kind of load can this MOSFET switch?
This device can manage significant loads due to its high power dissipation of 200W, suitable for heavy-duty applications.
Is it compatible with standard gate voltages?
Yes, it operates effectively with a gate threshold voltage between 2V and 4V, ensuring compatibility with various drive circuits.
Liens connexes
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- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF3710PBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-247