Infineon HEXFET Type P-Channel MOSFET, 40 A, 100 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 919-4915
- Référence fabricant:
- IRF5210PBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
76,80 €
(TVA exclue)
92,95 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 14 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,536 € | 76,80 € |
| 100 - 200 | 1,306 € | 65,30 € |
| 250 + | 1,152 € | 57,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-4915
- Référence fabricant:
- IRF5210PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.69mm | |
| Height | 8.77mm | |
| Length | 10.54mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.69mm | ||
Height 8.77mm | ||
Length 10.54mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon HEXFET Series MOSFET, 40A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF5210PBF
This MOSFET is designed for various electrical and electronic applications. It is optimised for high efficiency, supporting automation and control systems where effective power management is crucial. Its robust specifications enable precise circuit control, ensuring reliability and efficiency in challenging environments.
Features & Benefits
• 40A continuous drain current accommodates high-power applications
• 100V maximum drain-source voltage provides operational versatility
• P-channel design simplifies circuit configuration
• Enhancement mode functionality facilitates efficient power management
• High maximum power dissipation capability enhances thermal performance
Applications
• Power switching in industrial automation
• DC-DC converters for efficient power supply
• Motor control circuits for precision
• Peak power handling scenarios in electronics
What is the maximum operating temperature for this component?
The component can operate at a maximum temperature of +175°C, making it suitable for high-temperature applications.
How does the low on-resistance benefit circuit performance?
The low on-resistance results in reduced power losses, leading to enhanced energy efficiency and improved thermal management.
Is this suitable for applications in automotive systems?
Yes, its robust specifications and thermal characteristics make it suitable for automotive applications where reliability is essential.
What kind of circuit configurations can it be integrated into?
This component integrates seamlessly into various configurations, including single and parallel arrangements, allowing for design flexibility.
How should it be installed to ensure optimal performance?
Ensure proper thermal contact with a heatsink, and adhere to recommended PCB layout guidelines to enhance performance and reliability.
Liens connexes
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- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
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