Infineon HEXFET Type P-Channel MOSFET, 40 A, 100 V Enhancement, 3-Pin TO-220

N° de stock RS:: 919-4915
Référence fabricant:: IRF5210PBF
Fabricant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 40 A, 100 V Enhancement, 3-Pin TO-220

Offre groupée disponible

Sous-total (1 tube de 50 unités)*

81,40 €

(TVA exclue)

98,50 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Temporairement en rupture de stock

1 000 unité(s) expédiée(s) à partir du 26 février 2026

Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails

Unité	Prix par unité	le tube*
50 - 50	1,628 €	81,40 €
100 - 200	1,384 €	69,20 €
250 +	1,221 €	61,05 €

*Prix donné à titre indicatif

N° de stock RS:: 919-4915
Référence fabricant:: IRF5210PBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	200W
	Typical Gate Charge Qg @ Vgs	180nC
	Forward Voltage Vf	-1.6V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Length	10.54mm
	Standards/Approvals	No
	Height	8.77mm
	Width	4.69 mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 200W
	Typical Gate Charge Qg @ Vgs 180nC
	Forward Voltage Vf -1.6V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Length 10.54mm
	Standards/Approvals No
	Height 8.77mm
	Width 4.69 mm
	Automotive Standard No

Pays d'origine :: CN

Infineon HEXFET Series MOSFET, 40A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF5210PBF

This MOSFET is designed for various electrical and electronic applications. It is optimised for high efficiency, supporting automation and control systems where effective power management is crucial. Its robust specifications enable precise circuit control, ensuring reliability and efficiency in challenging environments.

Features & Benefits

• 40A continuous drain current accommodates high-power applications

• 100V maximum drain-source voltage provides operational versatility

• P-channel design simplifies circuit configuration

• Enhancement mode functionality facilitates efficient power management

• High maximum power dissipation capability enhances thermal performance

Applications

• Power switching in industrial automation

• DC-DC converters for efficient power supply

• Motor control circuits for precision

• Peak power handling scenarios in electronics

What is the maximum operating temperature for this component?

The component can operate at a maximum temperature of +175°C, making it suitable for high-temperature applications.

How does the low on-resistance benefit circuit performance?

The low on-resistance results in reduced power losses, leading to enhanced energy efficiency and improved thermal management.

Is this suitable for applications in automotive systems?

Yes, its robust specifications and thermal characteristics make it suitable for automotive applications where reliability is essential.

What kind of circuit configurations can it be integrated into?

This component integrates seamlessly into various configurations, including single and parallel arrangements, allowing for design flexibility.

How should it be installed to ensure optimal performance?

Ensure proper thermal contact with a heatsink, and adhere to recommended PCB layout guidelines to enhance performance and reliability.