Infineon HEXFET Type P-Channel MOSFET, 12 A, 55 V Enhancement, 3-Pin TO-220

N° de stock RS:: 919-4858
Référence fabricant:: IRF9Z24NPBF
Fabricant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 12 A, 55 V Enhancement, 3-Pin TO-220

Offre groupée disponible

Sous-total (1 tube de 50 unités)*

23,65 €

(TVA exclue)

28,60 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

350 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le tube*
50 - 50	0,473 €	23,65 €
100 - 200	0,336 €	16,80 €
250 - 450	0,317 €	15,85 €
500 - 1200	0,293 €	14,65 €
1250 +	0,27 €	13,50 €

*Prix donné à titre indicatif

N° de stock RS:: 919-4858
Référence fabricant:: IRF9Z24NPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	175mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	19nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.6V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	45W
	Maximum Operating Temperature	175°C
	Height	8.77mm
	Length	10.54mm
	Standards/Approvals	No
	Width	4.69 mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 175mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 19nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.6V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 45W
	Maximum Operating Temperature 175°C
	Height 8.77mm
	Length 10.54mm
	Standards/Approvals No
	Width 4.69 mm
	Automotive Standard No

Pays d'origine :: CN

Infineon HEXFET Series MOSFET, 12A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRF9Z24NPBF

This high-performance MOSFET is designed for efficient power management across various applications. With a P-channel configuration, it is well-suited for controlled switching and enhanced current flow. The product plays a crucial role in driving high-power loads, ensuring consistent performance and thermal stability under challenging conditions.

Features & Benefits

• Maximum continuous drain current of 12A

• Maximum drain-source voltage of 55V

• Low RDS(on) of 175mΩ for reduced power loss

• Works with both negative and positive gate-source voltage

Applications

• Used in power management systems for automation

• Employed in switch mode power supplies for electronics

• Beneficial in audio amplifiers for improved performance

• Common in various consumer electronics for efficient energy use

What is the typical gate charge for optimal performance?

The typical gate charge is 19nC at a gate-source voltage of 10V, providing effective switching characteristics.

How does the channel type affect functionality?

As a P-channel MOSFET, it allows for better integration in high-side switching applications, expanding potential usage scenarios in power circuits.

What is the significance of the temperature range?

The operating temperature range from -55°C to +175°C ensures reliability in various environments, making it versatile for different industrial applications.

Can it be used in high-frequency switching applications?

Yes, the combination of low gate charge and resistance makes it appropriate for high-frequency applications, enhancing performance efficiency.

What considerations should be given for installation?

Ensure proper thermal management and adequate mounting to facilitate effective heat dissipation, which can enhance longevity and reliability in operation.