Infineon HEXFET Type P-Channel MOSFET, 23 A, 100 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 919-4886
- Référence fabricant:
- IRF9540NPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
44,80 €
(TVA exclue)
54,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 600 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 400 unité(s) expédiée(s) à partir du 28 septembre 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,896 € | 44,80 € |
| 100 - 200 | 0,663 € | 33,15 € |
| 250 - 450 | 0,628 € | 31,40 € |
| 500 - 950 | 0,583 € | 29,15 € |
| 1000 + | 0,538 € | 26,90 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-4886
- Référence fabricant:
- IRF9540NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 23A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 117mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 97nC | |
| Maximum Power Dissipation Pd | 140W | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Width | 4.69mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 23A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 117mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 97nC | ||
Maximum Power Dissipation Pd 140W | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Height 8.77mm | ||
Width 4.69mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 23A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRF9540NPBF
This P-channel MOSFET is intended for high-performance applications across electronics and automation sectors. It supports a maximum continuous drain current of 23A and a drain-source voltage of 100 V, enhancing circuit efficiency. The enhancement mode configuration allows for accurate control of the output, making it suitable for various industries, including electrical and mechanical applications.
Features & Benefits
• Handles up to 23A continuous drain current for robust performance
• Maximum drain-source voltage of 100V for consistent operation
• Low maximum drain-source resistance of 117 mΩ optimises energy efficiency
• Capable of power dissipation up to 140W for intensive applications
• Typical gate charge of 97 nC at 10V supports fast switching
Applications
• Employed in power management circuits for efficient energy conversion
• Used in motor control systems for accurate speed regulation
• Integrated into power supply circuits to improve operational reliability
• Utilised in various automation systems for effective control functions
What is the temperature range for optimal performance?
The operating temperature range spans from -55°C to +175°C, allowing for effective use in diverse environmental conditions.
How does the gate threshold voltage affect operation?
The gate threshold voltage varies between 2V and 4V, ensuring reliable activation and smooth operation in response to control signals.
What type of mounting is required for installation?
This MOSFET is designed for through-hole mounting, facilitating integration into different electronic assemblies.
Can this MOSFET be used in high-frequency applications?
Yes, it is suitable for high-frequency switching applications due to its low gate charge and rapid switching capabilities.
What is the significance of the low drain-source resistance?
A low drain-source resistance of 117 mΩ enhances overall power efficiency by minimising energy losses during operation.
Liens connexes
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRF9540NPBF
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- Infineon HEXFET Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 IRLML5103TRPBF
- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220