Infineon HEXFET Type P-Channel MOSFET, 14 A, 100 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 919-4860
- Référence fabricant:
- IRF9530NPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
33,40 €
(TVA exclue)
40,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 400 unité(s) expédiée(s) à partir du 26 octobre 2026
- Plus 12 700 unité(s) expédiée(s) à partir du 02 novembre 2026
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Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,668 € | 33,40 € |
| 100 - 200 | 0,635 € | 31,75 € |
| 250 - 450 | 0,608 € | 30,40 € |
| 500 - 1200 | 0,568 € | 28,40 € |
| 1250 + | 0,535 € | 26,75 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-4860
- Référence fabricant:
- IRF9530NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 79W | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.69mm | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 79W | ||
Maximum Operating Temperature 175°C | ||
Width 4.69mm | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Height 8.77mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon HEXFET Series MOSFET, 14A Maximum Continuous Drain Current, 79W Maximum Power Dissipation - IRF9530NPBF
This MOSFET is designed for high-efficiency applications in the automation, electronics, and electrical sectors. Its P-channel configuration enhances switching performance, making it vital for power management systems. The device operates effectively in various environments, delivering consistent performance under challenging conditions, making it an important component for engineers and designers seeking durability and efficiency.
Features & Benefits
• Maximum continuous drain current of 14A for robust performance
• Compatible with drain-source voltages of up to 100V for versatility
• Low on-resistance of 200mΩ enhances power efficiency
• TO-220AB package design facilitates easy mounting and heat dissipation
• Enhancement mode operation ensures dependable switching performance
• High gate threshold voltage of 4V allows for effective control
Applications
• Suitable for integration into power supply circuits
• Utilised in motor control systems for improved efficiency
• Applicable in power converters for enhanced energy management
• Ideal for power switching in electronic devices
• Employed in high current driver circuits for dependability
How can the operating temperature range affect usage?
The device operates effectively between -55°C and +175°C, enabling functionality in extreme conditions without compromising performance.
What are the implications of the maximum power dissipation specification?
With a maximum power dissipation of 79W, the component can manage substantial load demands, ensuring stable operation and longevity in high-performance settings.
Can it be used in parallel configurations for increased current capacity?
Yes, it can be arranged in parallel to distribute current loads effectively, provided that thermal management is suitably addressed.
What precautions should be taken during installation?
Proper heat sinking is essential to prevent overheating; it is important to ensure that thermal resistance aligns with the system's specifications for long-term reliability.
How does device selection impact overall circuit performance?
Choosing the appropriate specifications improves circuit efficiency, reducing power losses and enhancing overall system performance, especially in high-demand applications.
Liens connexes
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- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
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