Infineon HEXFET Type P-Channel MOSFET, 40 A, 100 V Enhancement, 3-Pin TO-220 IRF5210PBF
- N° de stock RS:
- 541-1720
- Numéro d'article Distrelec:
- 303-41-280
- Référence fabricant:
- IRF5210PBF
- Fabricant:
- Infineon
Sous-total (1 unité)*
2,88 €
(TVA exclue)
3,48 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Plus 1 unité(s) expédiée(s) à partir du 26 octobre 2026
- Plus 14 unité(s) expédiée(s) à partir du 26 octobre 2026
Unité | Prix par unité |
|---|---|
| 1 - 9 | 2,88 € |
| 10 - 24 | 2,74 € |
| 25 - 49 | 2,69 € |
| 50 - 99 | 2,51 € |
| 100 + | 2,34 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 541-1720
- Numéro d'article Distrelec:
- 303-41-280
- Référence fabricant:
- IRF5210PBF
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.6V | |
| Maximum Power Dissipation Pd | 200W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4.69mm | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.6V | ||
Maximum Power Dissipation Pd 200W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4.69mm | ||
Length 10.54mm | ||
Height 8.77mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 40A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF5210PBF
Features & Benefits
Applications
What is the maximum operating temperature for this component?
How does the low on-resistance benefit circuit performance?
Is this suitable for applications in automotive systems?
What kind of circuit configurations can it be integrated into?
How should it be installed to ensure optimal performance?
Liens connexes
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- Infineon HEXFET Type P-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
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