Infineon HEXFET Type N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-220

N° de stock RS:: 919-4882
Référence fabricant:: IRL540NPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-220

Offre groupée disponible

Sous-total (1 tube de 50 unités)*

53,85 €

(TVA exclue)

65,15 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

350 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Plus 450 unité(s) expédiée(s) à partir du 07 janvier 2026

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Unité	Prix par unité	le tube*
50 - 50	1,077 €	53,85 €
100 - 200	0,84 €	42,00 €
250 - 450	0,786 €	39,30 €
500 - 1200	0,732 €	36,60 €
1250 +	0,678 €	33,90 €

*Prix donné à titre indicatif

N° de stock RS:: 919-4882
Référence fabricant:: IRL540NPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	44mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	16 V
	Maximum Power Dissipation Pd	140W
	Typical Gate Charge Qg @ Vgs	74nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Height	8.77mm
	Length	10.54mm
	Width	4.69 mm
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 44mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 16 V
	Maximum Power Dissipation Pd 140W
	Typical Gate Charge Qg @ Vgs 74nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Height 8.77mm
	Length 10.54mm
	Width 4.69 mm
	Standards/Approvals No
	Automotive Standard No

Pays d'origine :: MX

Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRL540NPBF

This MOSFET is an essential component for high-performance circuits, designed to effectively handle high current and voltage applications. It operates with a maximum drain-source voltage of 100V, making it suitable for rigorous environments in automation and electronic systems. Its strong performance and dependable operation enhance efficiency across various electrical systems.

Features & Benefits

• Continuous drain current capability of 36A for demanding applications

• Low Rds(on) of 44mΩ minimises power losses during operation

• Enhancement mode design improves switching characteristics for efficiency

• Power dissipation rating of up to 140W accommodates high-performance scenarios

• Operating temperature range from -55°C to +175°C allows versatility

• Through hole mounting facilitates easy integration into existing systems

Applications

• Power management in industrial automation systems

• Electric motor control in robotics

• DC-DC converters in renewable energy systems

• Power supplies requiring efficient switching functionality

• Consumer electronics for effective power distribution

What are the maximum voltage and current ratings?

The maximum drain-source voltage is 100V, with a continuous drain current of 36A.

How does the low Rds(on) improve performance?

A low Rds(on) of 44mΩ results in minimal power dissipation, enhancing efficiency and reducing thermal load.

What is the significance of the enhancement mode?

This mode allows for improved control over operation, enabling efficient switching and application versatility.

Can it be used in high-temperature environments?

Yes, it operates effectively at temperatures from -55°C to +175°C, suitable for extreme conditions.

How should it be mounted for optimal performance?

It is designed for through hole mounting, ensuring secure installation and connectivity in circuits.