Infineon HEXFET N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 919-4882
- Référence fabricant:
- IRL540NPBF
- Fabricant:
- Infineon
Sous-total (1 tube de 50 unités)*
42,85 €
(TVA exclue)
51,85 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 50 unité(s) expédiée(s) à partir du 09 novembre 2026
- Plus 1 000 unité(s) expédiée(s) à partir du 12 novembre 2026
- Plus 1 000 unité(s) expédiée(s) à partir du 25 février 2027
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 0,857 € | 42,85 € |
| 100 - 200 | 0,668 € | 33,40 € |
| 250 - 450 | 0,625 € | 31,25 € |
| 500 - 1200 | 0,583 € | 29,15 € |
| 1250 + | 0,54 € | 27,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 919-4882
- Référence fabricant:
- IRL540NPBF
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 140W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -16V, +16V | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Maximum Operating Temperature | 175°C | |
| Width | 4.69mm | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Height | 8.77mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 140W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -16V, +16V | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Maximum Operating Temperature 175°C | ||
Width 4.69mm | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Height 8.77mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MX
Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRL540NPBF
Features & Benefits
Applications
What are the maximum voltage and current ratings?
How does the low Rds(on) improve performance?
What is the significance of the enhancement mode?
Can it be used in high-temperature environments?
How should it be mounted for optimal performance?
Liens connexes
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- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
