Infineon HEXFET N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-220 IRL540NPBF
- N° de stock RS:
- 541-1219
- Numéro d'article Distrelec:
- 303-41-393
- Référence fabricant:
- IRL540NPBF
- Fabricant:
- Infineon
Sous-total (1 unité)*
1,78 €
(TVA exclue)
2,15 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Plus 185 unité(s) expédiée(s) à partir du 12 octobre 2026
- Plus 7 unité(s) expédiée(s) à partir du 12 octobre 2026
- Plus 260 unité(s) expédiée(s) à partir du 12 octobre 2026
Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,78 € |
| 10 - 49 | 1,60 € |
| 50 + | 1,49 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 541-1219
- Numéro d'article Distrelec:
- 303-41-393
- Référence fabricant:
- IRL540NPBF
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -16V, +16V | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 140W | |
| Typical Gate Charge Qg @ Vgs | 74nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.77mm | |
| Length | 10.54mm | |
| Width | 4.69mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -16V, +16V | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 140W | ||
Typical Gate Charge Qg @ Vgs 74nC | ||
Maximum Operating Temperature 175°C | ||
Height 8.77mm | ||
Length 10.54mm | ||
Width 4.69mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRL540NPBF
Features & Benefits
Applications
What are the maximum voltage and current ratings?
How does the low Rds(on) improve performance?
What is the significance of the enhancement mode?
Can it be used in high-temperature environments?
How should it be mounted for optimal performance?
Liens connexes
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
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- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
