Infineon HEXFET Type N-Channel MOSFET, 9.7 A, 100 V Enhancement, 3-Pin TO-220

N° de stock RS:: 919-4876
Référence fabricant:: IRF520NPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 9.7 A, 100 V Enhancement, 3-Pin TO-220

Offre groupée disponible

Sous-total (1 tube de 50 unités)*

25,30 €

(TVA exclue)

30,60 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

100 unité(s) prête(s) à être expédiée(s)
Plus 200 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Plus 2 000 unité(s) expédiée(s) à partir du 08 janvier 2026

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Unité	Prix par unité	le tube*
50 - 50	0,506 €	25,30 €
100 - 200	0,42 €	21,00 €
250 - 450	0,395 €	19,75 €
500 - 1200	0,365 €	18,25 €
1250 +	0,339 €	16,95 €

*Prix donné à titre indicatif

N° de stock RS:: 919-4876
Référence fabricant:: IRF520NPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9.7A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	200mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	48W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	25nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	10.54mm
	Standards/Approvals	No
	Height	8.77mm
	Width	4.69 mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9.7A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 200mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 48W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 25nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 10.54mm
	Standards/Approvals No
	Height 8.77mm
	Width 4.69 mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 9.7A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRF520NPBF

This MOSFET utilises advanced HEXFET technology to provide high performance for various applications. With a continuous drain current capability of 9.7A and a maximum drain-source voltage of 100V, it is a suitable component for electronic circuits. Its enhancement mode design ensures efficient operation in diverse environments, making it a practical choice for professionals in the automation and electronics fields.

Features & Benefits

• High current capacity of 9.7A enhances performance

• Robust design ensures functionality in extreme conditions

• Low on-resistance of 200mΩ minimises power loss

• Fast switching capabilities improve efficiency

• Compatible with TO-220AB package for straightforward installation

Applications

• Power management in automation systems

• Switching in electrical circuits

• Motor drive circuits for improved efficiency

• High-frequency in electronics

How does the low on-resistance impact performance?

The low on-resistance reduces heat generation and enhances efficiency, resulting in improved overall performance in power applications by minimising energy losses.

What is the significance of the temperature range?

The wide operational temperature range ensures consistent performance in various environments, effectively accommodating both high and low temperature applications.

Can this component handle short pulses of higher current?

Yes, it can manage pulsed drain currents up to 38A, making it suitable for transient conditions in electronic circuits.

What considerations should I have when installing?

Ensure appropriate heatsinking as specified in the datasheet to manage heat dissipation effectively during operation, particularly under high load conditions.

How does the device perform under rapid switching conditions?

Its fast switching speed supports efficient operation in applications requiring quick response times, making it a versatile choice for modern electronic designs.