Infineon HEXFET N-Channel MOSFET, 20 A, 100 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 541-2470
- Numéro d'article Distrelec:
- 303-41-337
- Référence fabricant:
- IRFI540NPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
2,09 €
(TVA exclue)
2,53 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 68 unité(s) expédiée(s) à partir du 12 octobre 2026
- Plus 625 unité(s) expédiée(s) à partir du 19 octobre 2026
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 2,09 € |
| 10 - 49 | 1,91 € |
| 50 - 99 | 1,75 € |
| 100 - 249 | 1,63 € |
| 250 + | 1,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 541-2470
- Numéro d'article Distrelec:
- 303-41-337
- Référence fabricant:
- IRFI540NPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 94nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 54W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.9mm | |
| Length | 10.63mm | |
| Width | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 94nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 54W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 8.9mm | ||
Length 10.63mm | ||
Width 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon HEXFET Series MOSFET, 20A Maximum Continuous Drain Current, 54W Maximum Power Dissipation - IRFI540NPBF
This MOSFET is developed for high-performance applications in the electronics industry, playing a crucial role in power management and providing a dependable solution for switching and amplifying electronic signals. It can manage significant voltage and current loads, ensuring efficiency in modern electronic devices.
Features & Benefits
• Continuous drain current rating up to 20A
• Voltage rating of 100V for durable performance
• Low gate threshold voltage enhances switching efficiency
• High power dissipation capability of up to 54W for durability
• N-channel enhancement mode design for a variety of applications
• Low drain-source resistance of 52 mΩ minimises energy loss
Applications
• Used in power supplies for electronic circuits
• Applicable in automotive power management systems
• Utilised in motor control systems for increased efficiency
• Important for power conversion in renewable energy systems
• Employed in automated machinery for effective control processes
What is the maximum continuous current rating for this device?
The device supports a maximum continuous drain current of 20A, accommodating various applications.
How does the gate threshold voltage affect performance?
The gate threshold voltage ranges from 2V to 4V, facilitating efficient switching at lower control voltages and enhancing performance.
Can this device operate in high-temperature environments?
Yes, it can function at temperatures reaching +175°C, ensuring performance in challenging conditions.
Is there a specific mounting type recommended for optimal performance?
It is suited for through-hole mounting, allowing secure connections and effective thermal management in different applications.
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IRFI540NPBF
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220