Infineon HEXFET Type N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-220

N° de stock RS:: 688-6872
Référence fabricant:: IRF540ZPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-220

Offre groupée disponible

Sous-total (1 paquet de 2 unités)*

1,39 €

(TVA exclue)

1,682 €

(TVA incluse)

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Unité	Prix par unité	le paquet*
2 - 18	0,695 €	1,39 €
20 - 98	0,635 €	1,27 €
100 - 198	0,58 €	1,16 €
200 - 498	0,545 €	1,09 €
500 +	0,51 €	1,02 €

*Prix donné à titre indicatif

N° de stock RS:: 688-6872
Référence fabricant:: IRF540ZPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	100V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	27mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	92W
	Forward Voltage Vf	1.3V
	Typical Gate Charge Qg @ Vgs	42nC
	Maximum Operating Temperature	175°C
	Length	10.54mm
	Standards/Approvals	No
	Height	8.77mm
	Width	4.69 mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 100V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 27mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 92W
	Forward Voltage Vf 1.3V
	Typical Gate Charge Qg @ Vgs 42nC
	Maximum Operating Temperature 175°C
	Length 10.54mm
	Standards/Approvals No
	Height 8.77mm
	Width 4.69 mm
	Automotive Standard No

Pays d'origine :: CN

Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRF540ZPBF

This MOSFET is designed to deliver high performance in various electronic applications. Capable of handling a maximum continuous drain current of 36A and a drain-source voltage of 100V, its TO-220AB package ensures effective heat dissipation and stability. With maximum power dissipation rated at 92W, this N-channel device is particularly suited for demanding tasks in electrical and mechanical industries.

Features & Benefits

• Utilises HEXFET technology for enhanced efficiency

• Low Rds(on) of 26.5mΩ minimises power loss

• Fast switching speeds improve operational efficiency

• Supports enhancement mode for reliable performance

• Designed to handle repetitive avalanche conditions

Applications

• Used for motor control and power management

• Ideal for switching power supplies and converters

• Suitable for automotive requiring high efficiency

• Implemented in industrial automation systems

• Effective in electronic devices needing robust performance

What is the significance of the low Rds(on) rating in its performance?

The low Rds(on) rating reduces conduction losses, leading to higher efficiency during operation. It allows for improved thermal performance, which is critical in high-current applications.

How does the maximum drain-source voltage affect operational reliability?

The 100V drain-source voltage rating provides a substantial safety margin for applications, ensuring reliable operation under varying voltage conditions, thus preventing breakdown.

Can this MOSFET handle high-temperature environments?

With a maximum operating temperature of 175°C, it is designed to operate reliably in high-temperature conditions, making it suitable for challenging environments found in automotive and industrial applications.