Infineon HEXFET N-Channel MOSFET, 36 A, 100 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 688-6872
- Référence fabricant:
- IRF540ZPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
3,68 €
(TVA exclue)
4,46 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 364 unité(s) expédiée(s) à partir du 12 octobre 2026
- Plus 48 unité(s) expédiée(s) à partir du 19 octobre 2026
- Plus 800 unité(s) expédiée(s) à partir du 03 décembre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 1,84 € | 3,68 € |
| 20 - 98 | 1,705 € | 3,41 € |
| 100 - 198 | 1,54 € | 3,08 € |
| 200 - 498 | 1,435 € | 2,87 € |
| 500 + | 1,345 € | 2,69 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 688-6872
- Référence fabricant:
- IRF540ZPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 36A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 92W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.77mm | |
| Standards/Approvals | No | |
| Length | 10.54mm | |
| Width | 4.69mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 36A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 92W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 8.77mm | ||
Standards/Approvals No | ||
Length 10.54mm | ||
Width 4.69mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Infineon HEXFET Series MOSFET, 36A Maximum Continuous Drain Current, 100V Maximum Drain Source Voltage - IRF540ZPBF
This MOSFET is designed to deliver high performance in various electronic applications. Capable of handling a maximum continuous drain current of 36A and a drain-source voltage of 100V, its TO-220AB package ensures effective heat dissipation and stability. With maximum power dissipation rated at 92W, this N-channel device is particularly suited for demanding tasks in electrical and mechanical industries.
Features & Benefits
• Utilises HEXFET technology for enhanced efficiency
• Low Rds(on) of 26.5mΩ minimises power loss
• Fast switching speeds improve operational efficiency
• Supports enhancement mode for reliable performance
• Designed to handle repetitive avalanche conditions
Applications
• Used for motor control and power management
• Ideal for switching power supplies and converters
• Suitable for automotive requiring high efficiency
• Implemented in industrial automation systems
• Effective in electronic devices needing robust performance
What is the significance of the low Rds(on) rating in its performance?
The low Rds(on) rating reduces conduction losses, leading to higher efficiency during operation. It allows for improved thermal performance, which is critical in high-current applications.
How does the maximum drain-source voltage affect operational reliability?
The 100V drain-source voltage rating provides a substantial safety margin for applications, ensuring reliable operation under varying voltage conditions, thus preventing breakdown.
Can this MOSFET handle high-temperature environments?
With a maximum operating temperature of 175°C, it is designed to operate reliably in high-temperature conditions, making it suitable for challenging environments found in automotive and industrial applications.
Liens connexes
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- Infineon HEXFET N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220