Infineon HEXFET Type N-Channel MOSFET, 4.1 A, 20 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 165-7766
- Référence fabricant:
- IRLML6246TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
300,00 €
(TVA exclue)
360,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 08 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,10 € | 300,00 € |
| 6000 - 12000 | 0,098 € | 294,00 € |
| 15000 + | 0,095 € | 285,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-7766
- Référence fabricant:
- IRLML6246TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 66mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.3W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 66mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.3W | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Length 3.04mm | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
Infineon HEXFET Series MOSFET, 20V Maximum Drain Source Voltage, 4.1A Maximum Continuous Drain Current - IRLML6246TRPBF
This MOSFET is a compact N‑channel enhancement device designed for low-voltage switching in surface-mount assemblies. It operates across a wide temperature range and accepts gate-drive levels compatible with common control circuits. The package and electrical characteristics make it appropriate for space‑constrained boards requiring efficient switching performance without elevated power‑handling requirements.
Features and Benefits:
• Maximum drain-source voltage 20V enables low-voltage switching applications
• Continuous drain current 4.1A supports moderate load currents
• Low on‑resistance 66 mΩ minimises conduction losses
• Typical gate charge 3.5 nC allows faster switching transitions
• Maximum power dissipation 1.3W suits constrained thermal budgets
• Gate-source tolerance up to 12V permits robust drive margins
• Continuous drain current 4.1A supports moderate load currents
• Low on‑resistance 66 mΩ minimises conduction losses
• Typical gate charge 3.5 nC allows faster switching transitions
• Maximum power dissipation 1.3W suits constrained thermal budgets
• Gate-source tolerance up to 12V permits robust drive margins
Applications
• Suitable for battery-management switching in portable systems
• Ideal for load switching in power-distribution modules
• Used with gate drivers in motor-control low-voltage stages
• Can be used for DC-DC converter synchronous switching
• Suitable for signal-level high-speed switching in control circuits
• Ideal for load switching in power-distribution modules
• Used with gate drivers in motor-control low-voltage stages
• Can be used for DC-DC converter synchronous switching
• Suitable for signal-level high-speed switching in control circuits
What thermal extremes can this device tolerate in operation?
It is specified to operate from -55 °C up to 150 °C, allowing use in environments with wide temperature fluctuations.
How does the package influence PCB layout and assembly?
The SOT‑23 surface‑mount format with three pins reduces board area and supports automated pick‑and‑place and reflow processes.
What is the expected behaviour under higher gate voltages?
The device limits gate‑source ratings to 12V maximum, so gate drives should remain within this threshold to prevent gate‑oxide stress.
How does the device perform under continuous load?
Continuous drain current is rated at 4.1A while thermal dissipation is constrained to 1.3 W, so adequate copper area or heatsinking is required to maintain safe junction temperatures.
Liens connexes
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