Références fabricant

Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23

N° de stock RS:: 165-7763
Référence fabricant:: IRLML2030TRPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 2.7 A, 30 V Enhancement, 3-Pin SOT-23

Actuellement indisponible

Désolés, nous ne savons pas quand ce produit sera réapprovisionné.

N° de stock RS:: 165-7763
Référence fabricant:: IRLML2030TRPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	2.7A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.3W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	1nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.04mm
	Height	1.02mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 2.7A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.3W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 1nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.04mm
	Height 1.02mm
	Automotive Standard No

Pays d'origine :: PH

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 100mΩ Maximum Drain Source Resistance - IRLML2030TRPBF

This MOSFET is a compact N-channel enhancement device designed for low-power switching in small-form-factor surface-mount assemblies. It is intended for applications requiring moderate current handling and a 30V blocking capability, performing switching duties across a wide ambient range from cold to high-temperature environments.

Features and Benefits:

• Low on-resistance 100mΩ reduces conduction losses and heat
• 30V drain-source rating permits moderate-voltage switching
• Continuous drain current 2.7A supports sustained load operation
• Low gate charge 1nC enables fast, efficient switching
• Maximum power dissipation 1.3W allows thermal budgeting
• Gate-source withstand 20V provides input margin for drivers

Applications

• Suitable for battery protection and load switching circuits
• Ideal for portable device power-management stages
• Used with DC-DC converters in small SMD designs
• Can be used for LED drivers and small motor control
• Suitable for signal-level switching in consumer electronics

What thermal range can it operate within?

It functions from -55°C up to 150°C, enabling use across extreme ambient conditions.

How is it packaged for PCB assembly?

It is supplied in a SOT-23 surface-mount package for compact board placement.

What electrical role does the device serve in switching designs?

It acts as a low-voltage switch transistor, handling on/off control while limiting conduction losses due to its specified RDS(on).

How small is the component footprint for layout planning?

The device measures 3.04 x 1.4 x 1.02mm, allowing tight component packing on SMD boards.

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