Infineon HEXFET N-Channel MOSFET, 1.2 A, 30 V Enhancement, 3-Pin SOT-23 IRLML2803TRPBF
- N° de stock RS:
- 302-022
- Numéro d'article Distrelec:
- 304-36-995
- Référence fabricant:
- IRLML2803TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
2,14 €
(TVA exclue)
2,59 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 490 unité(s) expédiée(s) à partir du 30 octobre 2026
- Plus 2 850 unité(s) expédiée(s) à partir du 05 novembre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,428 € | 2,14 € |
| 50 - 245 | 0,384 € | 1,92 € |
| 250 + | 0,34 € | 1,70 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 302-022
- Numéro d'article Distrelec:
- 304-36-995
- Référence fabricant:
- IRLML2803TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 540mW | |
| Typical Gate Charge Qg @ Vgs | 3.3nC | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 540mW | ||
Typical Gate Charge Qg @ Vgs 3.3nC | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Height 1.02mm | ||
Length 3.04mm | ||
Automotive Standard AEC-Q101 | ||
Infineon HEXFET Series MOSFET, 1.2A Maximum Continuous Drain Current, 540 mW Maximum Power Dissipation - IRLML2803TRPBF
This N-channel MOSFET delivers enhanced performance and reliability for a range of electronic applications. Designed with Hexfet technology, it operates efficiently in surface mount configurations, making it suitable for compact designs in the automation and electrical sectors. The combination of low RDS(on) and a high continuous drain current supports optimal power management in various conditions.
Features & Benefits
• Supports a maximum continuous drain current of 1.2A for effective performance
• High maximum drain-source voltage of 30V allows for versatile usage
• Low maximum drain-source resistance of 250mΩ minimises power losses
• Enhancement mode operation enables efficient switching capabilities
• Compact SOT-23 package is ideal for space-constrained applications
• Operates at high temperatures, with a maximum operating temperature of +150°C
Applications
• Utilised in DC-DC converters for effective energy management
• Employed in motor control circuits for improved precision
• Suitable for power supply switching in consumer electronics
• Integrated into automation systems for efficient load management
What is the optimal gate voltage for operation?
The optimal gate voltage for this device is +10V, allowing for efficient switching and performance.
How does it perform in high temperatures?
This component can function at temperatures up to +150°C, ensuring reliability in thermal conditions.
Can it handle pulsed drain currents?
Yes, it supports pulsed drain currents significantly above continuous ratings, accommodating short current surges.
What mounting type is recommended for this device?
Surface mount is the recommended type, as it provides better thermal performance and space efficiency in circuit designs.
What precautions should be taken during installation?
Proper thermal management and adherence to maximum ratings are necessary to prevent damage during operation.
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