Infineon HEXFET Type N-Channel MOSFET, 19 A, 200 V Enhancement, 7-Pin DirectFET
- N° de stock RS:
- 215-2580
- Référence fabricant:
- IRF6785MTRPBF
- Fabricant:
- Infineon
Sous-total (1 bobine de 4800 unités)*
4 924,80 €
(TVA exclue)
5 956,80 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 20 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 4800 + | 1,026 € | 4 924,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-2580
- Référence fabricant:
- IRF6785MTRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 19A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | DirectFET | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 57W | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 19A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type DirectFET | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 57W | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET Power MOSFET has 200V maximum drain source voltage in a DirectFET MZ package rated at 19 amperes optimized with low on resistance. This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6785MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wire bonded SOIC packaging.
Latest MOSFET Silicon technology
Key parameters optimized for Class-D audio amplifier applications
Dual sided cooling compatible
Lead-Free (Qualified up to 260°C Reflow)
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 7-Pin DirectFET IRF6785MTRPBF
- Infineon HEXFET Type N-Channel MOSFET 80 V Enhancement, 7-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 7-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 80 V Enhancement, 7-Pin DirectFET IRF6668TRPBF
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 7-Pin DirectFET AUIRF7675M2TR
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 6-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 2-Pin DirectFET
- Infineon HEXFET Type N-Channel MOSFET 20 V Enhancement, 2-Pin DirectFET