Infineon HEXFET Type N-Channel MOSFET, 8.2 A, 30 V Enhancement, 6-Pin TSOP

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Sous-total (1 bobine de 3000 unités)*

381,00 €

(TVA exclue)

462,00 €

(TVA incluse)

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Dernier stock RS
  • 3 000 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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Prix par unité
la bobine*
3000 +0,127 €381,00 €

*Prix donné à titre indicatif

N° de stock RS:
165-5807
Référence fabricant:
IRFTS8342TRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.2A

Maximum Drain Source Voltage Vds

30V

Package Type

TSOP

Series

HEXFET

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

29mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.8nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Length

3mm

Height

1.3mm

Width

1.75 mm

Standards/Approvals

No

Automotive Standard

No

Pays d'origine :
CN

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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