Vishay IRFU9310 Type P-Channel Power MOSFET, -1.8 A, -400 V Enhancement, 3-Pin IPAK

N° de stock RS:: 919-4505
Référence fabricant:: IRFU9310PBF
Fabricant:: Vishay

Vishay IRFU9310 Type P-Channel Power MOSFET, -1.8 A, -400 V Enhancement, 3-Pin IPAK

Sous-total (1 tube de 75 unités)*

63,45 €

(TVA exclue)

76,80 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

13 500 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le tube*
75 +	0,846 €	63,45 €

*Prix donné à titre indicatif

N° de stock RS:: 919-4505
Référence fabricant:: IRFU9310PBF
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type P
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	-1.8A
	Maximum Drain Source Voltage Vds	-400V
	Series	IRFU9310
	Package Type	IPAK
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	7Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	50W
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	13nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-4V
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Standards/Approvals	RoHS
	Height	6.22mm
	Width	2.38mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type P
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id -1.8A
	Maximum Drain Source Voltage Vds -400V
	Series IRFU9310
	Package Type IPAK
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 7Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 50W
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 13nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -4V
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Standards/Approvals RoHS
	Height 6.22mm
	Width 2.38mm
	Automotive Standard No

Vishay IRFU9310 Series Power MOSFET, -400V Maximum Drain Source Voltage, -1.8A Maximum Continuous Drain Current - IRFU9310PBF

This power MOSFET is a P-channel switching device designed for high-voltage applications in industrial electronics. It operates as an enhancement-mode transistor suitable for through-hole mounting and is intended for circuits requiring negative-polarity switching with moderate current and high blocking voltage.

Features and Benefits:

• Rated for -400V drain-source voltage enabling high-voltage switching
• Maximum continuous drain current -1.8 A supporting moderate-load operation
• Maximum power dissipation 50W allowing robust thermal handling
• Typical gate charge 13 nC reducing switching losses
• Maximum gate-source voltage 20V offering safe gate-drive margin
• Operating range -55 °C to 150 °C permitting wide temperature environments

Applications

• Suitable for high-voltage polarity-reversal circuits in power supplies
• Ideal for load switching in industrial automation panels
• Used for discrete-stage switching in motor control electronics
• Can be used for negative-side switching in power distribution modules

What package style does it use for prototyping and assembly?

The device is supplied in an IPAK through-hole package with three pins for hand-soldering or wave-solder processes.

How does the on-resistance affect thermal performance?

The maximum drain-source resistance of 7 Ω increases conduction losses at higher currents, which requires adequate heatsinking to maintain junction temperature within limits.

What environmental limits govern continuous operation?

It can be operated down to -55 °C and up to 150 °C, so thermal management and ambient conditions must be considered for reliable long-term use.

Is it suitable for automotive-grade systems?

The component is not specified to automotive standards

its approvals list RoHS only.