Vishay IRFU420 Type N-Channel Power MOSFET, 2.4 A, 500 V Enhancement, 3-Pin IPAK IRFU420PBF

N° de stock RS:: 146-4434
Référence fabricant:: IRFU420PBF
Fabricant:: Vishay

Vishay IRFU420 Type N-Channel Power MOSFET, 2.4 A, 500 V Enhancement, 3-Pin IPAK IRFU420PBF

Sous-total (1 bobine de 3000 unités)*

2 469,00 €

(TVA exclue)

2 988,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 26 mars 2027

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Unité	Prix par unité	la bobine*
3000 +	0,823 €	2 469,00 €

*Prix donné à titre indicatif

N° de stock RS:: 146-4434
Référence fabricant:: IRFU420PBF
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	2.4A
	Maximum Drain Source Voltage Vds	500V
	Series	IRFU420
	Package Type	IPAK
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	42W
	Typical Gate Charge Qg @ Vgs	19nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.6V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	6.22mm
	Standards/Approvals	RoHS
	Height	2.39mm
	Length	6.73mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 2.4A
	Maximum Drain Source Voltage Vds 500V
	Series IRFU420
	Package Type IPAK
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 42W
	Typical Gate Charge Qg @ Vgs 19nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.6V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 6.22mm
	Standards/Approvals RoHS
	Height 2.39mm
	Length 6.73mm
	Automotive Standard No

Vishay IRFU420 Series Power MOSFET, 500V Maximum Drain Source Voltage, 42W Maximum Power Dissipation - IRFU420PBF

This power MOSFET is a high-voltage N-channel transistor designed to switch and control power in demanding electronic systems. It operates as an enhancement-mode device suitable for surface-mounted assemblies and complies with RoHS environmental standards. The component is intended for circuits requiring high blocking voltage and moderate current handling while accommodating elevated operating temperatures.

Features and Benefits:

• 500V drain-to-source rating enables high-voltage switching
• 3Ω Rds(on) delivers predictable conduction loss control
• 2.4A continuous drain current supports moderate-load applications
• 42W maximum power dissipation allows substantial thermal throughput
• 19nC typical gate charge at Vgs gives predictable switching energy
• ±20V gate-source tolerance permits flexible drive voltages

Applications

• Suitable for high-voltage power supply switching stages
• Ideal for industrial motor drive gate stages
• Used with DC-DC converters in elevated temperature environments
• Can be used for electronic load and protection circuits
• Appropriate for SMPS and power management modules

What temperature range can it withstand in operation?

It is specified to operate from -55°C up to 150°C, allowing use in environments with wide thermal variation.

What package form should I expect for assembly?

The device is supplied in an IPAK surface-mount package configured with three pins for straightforward board mounting.

How does the forward voltage affect low-voltage operation?

The forward voltage of 1.6V characterises conduction across the device during forward-biased conditions and influences on-state voltage drop in low-voltage circuits.

Is this component intended for automotive applications?

It is not classified to automotive standards, so it should be evaluated against vehicle-specific qualification requirements before use in automotive systems.