Vishay IRFU420 Type N-Channel Power MOSFET, 2.4 A, 500 V Enhancement, 3-Pin IPAK

N° de stock RS:: 146-4434
Référence fabricant:: IRFU420PBF
Fabricant:: Vishay

Vishay IRFU420 Type N-Channel Power MOSFET, 2.4 A, 500 V Enhancement, 3-Pin IPAK

Sous-total (1 bobine de 3000 unités)*

2 469,00 €

(TVA exclue)

2 988,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 03 décembre 2026

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Unité	Prix par unité	la bobine*
3000 +	0,823 €	2 469,00 €

*Prix donné à titre indicatif

N° de stock RS:: 146-4434
Référence fabricant:: IRFU420PBF
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	2.4A
	Maximum Drain Source Voltage Vds	500V
	Series	IRFU420
	Package Type	IPAK
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	42W
	Typical Gate Charge Qg @ Vgs	19nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.6V
	Maximum Operating Temperature	150°C
	Length	6.73mm
	Standards/Approvals	RoHS
	Width	6.22mm
	Height	2.39mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 2.4A
	Maximum Drain Source Voltage Vds 500V
	Series IRFU420
	Package Type IPAK
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 42W
	Typical Gate Charge Qg @ Vgs 19nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.6V
	Maximum Operating Temperature 150°C
	Length 6.73mm
	Standards/Approvals RoHS
	Width 6.22mm
	Height 2.39mm
	Automotive Standard No

Vishay IRFU420 Series Power MOSFET, 500V Maximum Drain Source Voltage, 2.4A Maximum Continuous Drain Current - IRFU420PBF

This power MOSFET is a high-voltage switching transistor designed for surface-mounted power conversion and control tasks in industrial systems. It operates as an N-channel enhancement-mode device suited to applications requiring elevated drain-source voltage handling and moderate continuous current, with an IPAK 3-pin package intended for Compact board-level integration.

Features and Benefits:

• 500V drain-source withstand for high-voltage switching capability • 3 Ω RDS(on) for predictable on-state conduction losses • 2.4 A continuous drain current for sustained load operation • 19 nC typical gate charge to aid switching energy estimation • 42W maximum power dissipation for thermal design margin • -55 °C to 150 °C operating range for wide thermal environments

Applications

• Suitable for industrial motor-drive gate switching stages • Ideal for high-voltage switch-mode power supplies • Used for line-voltage protection and snubber circuits • Can be used in automation control relays and drivers

What gate voltage limits should be observed during design?

Keep gate excursions within ±20V relative to source to prevent gate-oxide overstress and ensure long-term switching reliability.

How should thermal constraints be managed on the PCB?

Use adequate copper area and thermal vias to dissipate up to 42 W, and evaluate junction-to-ambient resistance for your cooling strategy.

What switching performance considerations arise from the gate charge?

Budget driver current and slew rates around the 19 nC gate charge Value to control switching losses and electromagnetic emissions during transitions.

Are there specific mounting recommendations for reliable operation?

As a surface-mount IPAK device, ensure secure solder joints and an appropriate footprint for heat spreading to maintain temperature within the -55 °C to 150 °C operational band.