Vishay IRFU1N60A Type N-Channel Power MOSFET, 1.4 A, 600 V Enhancement, 3-Pin IPAK IRFU1N60APBF

Sous-total (1 tube de 75 unités)*

64,425 €

(TVA exclue)

77,925 €

(TVA incluse)

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Prix par unité
le tube*
75 +0,859 €64,43 €

*Prix donné à titre indicatif

N° de stock RS:
145-1664
Référence fabricant:
IRFU1N60APBF
Fabricant:
Vishay
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Marque

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

1.4A

Maximum Drain Source Voltage Vds

600V

Series

IRFU1N60A

Package Type

IPAK

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

36W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Typical Gate Charge Qg @ Vgs

14nC

Maximum Gate Source Voltage Vgs

30V

Maximum Operating Temperature

150°C

Height

6.22mm

Standards/Approvals

RoHS

Width

2.39mm

Length

6.73mm

Automotive Standard

No

Pays d'origine :
MY

Vishay IRFU1N60A Series Power MOSFET, 600V Drain-Source Voltage, 36W Power Dissipation - IRFU1N60APBF


This power MOSFET is a high-voltage N-channel switching device designed for power conversion and control tasks in industrial electronic systems. It is suitable for through-hole board assembly and offers conservative operating limits for demanding environments where high voltage and thermal endurance are required.

Features and Benefits:


• 600V drain rating enables operation in high-voltage circuits
• 1.4 A continuous drain current permits light to moderate load handling
• 7 Ω RDS(on) provides predictable conduction characteristics
• 14 nC typical gate charge supports lower switching losses
• 36W power dissipation allows sustained power handling at elevated temperatures
• 150 °C maximum junction temperature supports high-temperature operation

Applications


• Suitable for switch-mode power supplies in industrial automation equipment
• Ideal for high-voltage power transistor roles in motor-control interfaces
• Used for auxiliary power conversion in electrical distribution modules
• Can be used for signal switching in instrumentation requiring through-hole parts

What gate-drive considerations should I allow for?


Drive circuitry should accommodate a maximum gate-source rating of 30V and provide sufficient drive current to charge the 14 nC gate for the intended switching speed.

How does the package affect mounting and thermal handling?


The three-pin IPAK through-hole package facilitates robust soldered connections and a mounting style that can aid heat transfer to a copper plane or heatsink arrangement.

What ambient temperature range is supported for deployment?


The device operates across a temperature span from -55 °C to a maximum of 150 °C

thermal management is required to keep the junction temperature below the limit.

Are there any environmental or regulatory attributes to note?


The component meets RoHS criteria for restricted substances and is not specified as meeting automotive standards.

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