Vishay IRFU1N60A Type N-Channel Power MOSFET, 1.4 A, 600 V Enhancement, 3-Pin IPAK IRFU1N60APBF

N° de stock RS:: 145-1664
Référence fabricant:: IRFU1N60APBF
Fabricant:: Vishay

Vishay IRFU1N60A Type N-Channel Power MOSFET, 1.4 A, 600 V Enhancement, 3-Pin IPAK IRFU1N60APBF

Sous-total (1 tube de 75 unités)*

64,425 €

(TVA exclue)

77,925 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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525 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le tube*
75 +	0,859 €	64,43 €

*Prix donné à titre indicatif

N° de stock RS:: 145-1664
Référence fabricant:: IRFU1N60APBF
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Product Type	Power MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	1.4A
	Maximum Drain Source Voltage Vds	600V
	Series	IRFU1N60A
	Package Type	IPAK
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	7Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	36W
	Maximum Gate Source Voltage Vgs	30V
	Forward Voltage Vf	1.6V
	Typical Gate Charge Qg @ Vgs	14nC
	Maximum Operating Temperature	150°C
	Height	6.22mm
	Standards/Approvals	RoHS
	Width	2.39mm
	Length	6.73mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Product Type Power MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 1.4A
	Maximum Drain Source Voltage Vds 600V
	Series IRFU1N60A
	Package Type IPAK
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 7Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 36W
	Maximum Gate Source Voltage Vgs 30V
	Forward Voltage Vf 1.6V
	Typical Gate Charge Qg @ Vgs 14nC
	Maximum Operating Temperature 150°C
	Height 6.22mm
	Standards/Approvals RoHS
	Width 2.39mm
	Length 6.73mm
	Automotive Standard No

Pays d'origine :: MY

Vishay IRFU1N60A Series Power MOSFET, 600V Drain Source Voltage, 1.4A Continuous Drain Current - IRFU1N60APBF

This power MOSFET is a high-voltage N-channel switching transistor designed for through-hole assembly in industrial electronics. It is intended for applications requiring high drain-source voltage handling and moderate continuous current, operating across a wide temperature range for demanding environments. The device complies with RoHS and is supplied in an IPak through-hole package.

Features and Benefits:

• 600V drain-source voltage for high-voltage switching capability
• 1.4A continuous drain current supporting moderate load currents
• 7Ω maximum Rds(on) reducing conduction losses at low currents
• 36W power dissipation allowing sustained thermal load handling
• 14nC typical gate charge enabling efficient gate-drive behaviour
• Gate-source withstand up to 30V for robust control-voltage margin

Applications

• Suitable for offline power supplies requiring high-voltage switches
• Used for lighting ballast and lamp control circuits
• Ideal for motor-drive gate stage in low-power systems
• Can be used for snubber or clamp-switch functions in converters
• Used with sensor and measurement front ends requiring high Vds

What thermal extremes can the device tolerate in operation?

It operates from -55°C up to 150°C, permitting use in industrial and elevated-temperature assemblies.

How is the transistor mounted on the board?

It is intended for through-hole mounting in an IPak package for secure mechanical retention.

What is the typical forward voltage in conduction scenarios?

The device exhibits a forward voltage of 1.6V under the specified test conditions for body-diode conduction.

Does the gate require special drive considerations due to charge?

With a typical gate charge of 14nC, gate drivers should be chosen to provide sufficient current for the intended switching speed without excessive drive losses.