Infineon HEXFET Type P-Channel MOSFET, 3 A, 30 V Enhancement, 3-Pin SOT-23

N° de stock RS:: 913-4705
Référence fabricant:: IRLML5203TRPBF
Fabricant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 3 A, 30 V Enhancement, 3-Pin SOT-23

Offre groupée disponible

Sous-total (1 bobine de 3000 unités)*

270,00 €

(TVA exclue)

330,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

27 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	la bobine*
3000 - 3000	0,09 €	270,00 €
6000 - 6000	0,086 €	258,00 €
9000 +	0,081 €	243,00 €

*Prix donné à titre indicatif

N° de stock RS:: 913-4705
Référence fabricant:: IRLML5203TRPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	165mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	9.5nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.25W
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3.04mm
	Width	1.4 mm
	Height	1.02mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 165mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 9.5nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.25W
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3.04mm
	Width 1.4 mm
	Height 1.02mm
	Automotive Standard No

Pays d'origine :: MX

Infineon HEXFET Series MOSFET, 3A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IRLML5203TRPBF

This MOSFET is a high-performance power device suitable for a range of applications in the electronics sector. Featuring a compact SOT-23 package, this P-channel device provides significant efficiency with a maximum continuous drain current of 3A and a drain-source voltage of 30V. With dimensions of 3.04mm in length, 1.4mm in width, and 1.02mm in height, it is well-suited for space-constrained designs.

Features & Benefits

• Capable of 30V drain-source voltage for versatile use

• Designed for surface mount for simplified PCB design

• Operates within a temperature range of -55°C to +150°C

• Utilises enhancement mode for reliable switching performance

Applications

• Utilised in battery management systems for optimal performance

• Used in portable electronics due to low-profile design

• Applied in load management solutions across various devices

• Suitable for advanced automation control systems

What is the significance of the low Rds(on) in this device?

The low Rds(on) ensures reduced power loss during operation, which enhances overall efficiency and maintains lower thermal levels in applications.

How does the power dissipation capability impact device performance?

The capability to dissipate up to 1.25W allows for effective heat management, ensuring the device operates reliably even under maximum load conditions without thermal failure.

What factors influence the selection of this MOSFET for a specific application?

Factors such as maximum continuous drain current, voltage ratings, and thermal characteristics should be considered to ensure compatibility with circuit requirements and performance expectations.