Infineon HEXFET Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 3-Pin SOT-23
- N° de stock RS:
- 912-8661
- Référence fabricant:
- IRLML2244TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 3000 unités)*
330,00 €
(TVA exclue)
390,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 04 décembre 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 3000 - 3000 | 0,11 € | 330,00 € |
| 6000 - 6000 | 0,105 € | 315,00 € |
| 9000 + | 0,098 € | 294,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 912-8661
- Référence fabricant:
- IRLML2244TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.3A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 95mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Maximum Power Dissipation Pd | 1.3W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 6.9nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Length | 3.04mm | |
| Standards/Approvals | No | |
| Width | 1.4mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.3A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 95mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12V | ||
Maximum Power Dissipation Pd 1.3W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 6.9nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Length 3.04mm | ||
Standards/Approvals No | ||
Width 1.4mm | ||
Automotive Standard No | ||
- Pays d'origine :
- PH
Infineon HEXFET Series MOSFET, 4.3A Maximum Continuous Drain Current, 20V Maximum Drain Source Voltage - IRLML2244TRPBF
This MOSFET is designed for robust performance in a compact SOT-23 package. With a maximum continuous drain current of 4.3A and a drain-source voltage of 20V, it is suitable for various applications in the automation, electronics, and electrical industries. The device features enhancement mode operation and offers reliable performance in high-temperature environments, maintaining functionality in temperatures up to +150°C.
Features & Benefits
• Low RDS(on) of 54mΩ minimises switching losses
• Compatible with industry-standard pinout for easy integration
• High reliability with a maximum power dissipation of 1.3W
• Narrow temperature range for optimal operational efficiency
• Reduced gate charge enhances overall efficiency
Applications
• Ideal for low-voltage switching in electronics
• Suitable for power management in DC-DC converters
• Utilised in motor control systems for automation equipment
• Used in power supply circuits for enhanced energy management
What is the significance of the low RDS(on) in this component?
The low RDS(on) significantly reduces the power losses during operation, leading to improved efficiency and performance, especially in switching applications.
How does the operating temperature range benefit circuit design?
An operating temperature range of -55°C to +150°C allows for versatility in applications, enabling the MOSFET to function reliably in various operating environments, from extreme cold to high heat.
What makes this device suitable for surface mount technology?
The compact SOT-23 package design and compatible pinout facilitate easy integration into PCB layouts, enhancing manufacturing efficiency and allowing for mass production.
Can this MOSFET be used in automotive applications?
Yes, due to its high thermal resistance and reliability at elevated temperatures, it is suitable for automotive applications where heat dissipation is critical.
Liens connexes
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