Infineon HEXFET Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 3-Pin SOT-23

N° de stock RS:: 912-8661
Référence fabricant:: IRLML2244TRPBF
Fabricant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 4.3 A, 20 V Enhancement, 3-Pin SOT-23

Offre groupée disponible

Sous-total (1 bobine de 3000 unités)*

240,00 €

(TVA exclue)

300,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

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Plus 153 000 unité(s) expédiée(s) à partir du 05 janvier 2026

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Unité	Prix par unité	la bobine*
3000 - 3000	0,08 €	240,00 €
6000 - 6000	0,076 €	228,00 €
9000 +	0,072 €	216,00 €

*Prix donné à titre indicatif

N° de stock RS:: 912-8661
Référence fabricant:: IRLML2244TRPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	4.3A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	95mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	6.9nC
	Maximum Power Dissipation Pd	1.3W
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Operating Temperature	150°C
	Width	1.4 mm
	Height	1.02mm
	Standards/Approvals	No
	Length	3.04mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 4.3A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 95mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 6.9nC
	Maximum Power Dissipation Pd 1.3W
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Operating Temperature 150°C
	Width 1.4 mm
	Height 1.02mm
	Standards/Approvals No
	Length 3.04mm
	Automotive Standard No

Pays d'origine :: PH

Infineon HEXFET Series MOSFET, 4.3A Maximum Continuous Drain Current, 20V Maximum Drain Source Voltage - IRLML2244TRPBF

This MOSFET is designed for robust performance in a compact SOT-23 package. With a maximum continuous drain current of 4.3A and a drain-source voltage of 20V, it is suitable for various applications in the automation, electronics, and electrical industries. The device features enhancement mode operation and offers reliable performance in high-temperature environments, maintaining functionality in temperatures up to +150°C.

Features & Benefits

• Low RDS(on) of 54mΩ minimises switching losses

• Compatible with industry-standard pinout for easy integration

• High reliability with a maximum power dissipation of 1.3W

• Narrow temperature range for optimal operational efficiency

• Reduced gate charge enhances overall efficiency

Applications

• Ideal for low-voltage switching in electronics

• Suitable for power management in DC-DC converters

• Utilised in motor control systems for automation equipment

• Used in power supply circuits for enhanced energy management

What is the significance of the low RDS(on) in this component?

The low RDS(on) significantly reduces the power losses during operation, leading to improved efficiency and performance, especially in switching applications.

How does the operating temperature range benefit circuit design?

An operating temperature range of -55°C to +150°C allows for versatility in applications, enabling the MOSFET to function reliably in various operating environments, from extreme cold to high heat.

What makes this device suitable for surface mount technology?

The compact SOT-23 package design and compatible pinout facilitate easy integration into PCB layouts, enhancing manufacturing efficiency and allowing for mass production.

Can this MOSFET be used in automotive applications?

Yes, due to its high thermal resistance and reliability at elevated temperatures, it is suitable for automotive applications where heat dissipation is critical.