Infineon HEXFET Type P-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 IRLML9301TRPBF

N° de stock RS:: 725-9366
Numéro d'article Distrelec:: 304-45-320
Référence fabricant:: IRLML9301TRPBF
Fabricant:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 IRLML9301TRPBF

Sous-total (1 paquet de 20 unités)*

6,44 €

(TVA exclue)

7,80 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Dernier stock RS

480 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution

Unité	Prix par unité	le paquet*
20 +	0,322 €	6,44 €

*Prix donné à titre indicatif

N° de stock RS:: 725-9366
Numéro d'article Distrelec:: 304-45-320
Référence fabricant:: IRLML9301TRPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	64mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-1.2V
	Maximum Power Dissipation Pd	1.3W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	4.8nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	1.4mm
	Length	3.04mm
	Height	1.02mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 64mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -1.2V
	Maximum Power Dissipation Pd 1.3W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 4.8nC
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 1.4mm
	Length 3.04mm
	Height 1.02mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 30V Maximum Drain Source Voltage, 3.6A Maximum Continuous Drain Current - IRLML9301TRPBF

This MOSFET semiconductor is designed for efficient power management in various electronic applications. It features a surface mount (SOT-23) design for easy integration in compact electronic circuits. The component operates effectively with a maximum continuous drain current of 3.6A and can handle a maximum drain-source voltage of 30V.

Features & Benefits

• Enhancement mode configuration allows for efficient operation

• High gate threshold voltage range enhances reliability

• Greater thermal resilience

• Optimised for Pulled Drain Current ratings, increasing performance reliability

Applications

• Used for power management in portable gadgets

• Ideal for automation control systems

• Utilised in audio amplifiers and signal processors

• Suitable for DC-DC converters in renewable energy systems

• Great fit for driving motors in robotic

What is the impact of the low on-resistance value on performance?

The low on-resistance of 64mΩ allows for reduced heat generation during operation, enhancing overall efficiency and prolonging component life in high-current applications.

How does the enhancement mode benefit circuit design?

The enhancement mode enables the MOSFET to remain off until a specific gate voltage is reached, providing reliable switching control suited for various electronic designs without unnecessary power loss.

Can this component handle high temperatures?

Yes, it is designed to operate reliably at temperatures up to +150°C, making it suitable for applications exposed to harsh environments or intensive use.