Infineon HEXFET Type P-Channel MOSFET, 3 A, 30 V Enhancement, 3-Pin SOT-23 IRLML5203TRPBF
- N° de stock RS:
- 784-0325
- Référence fabricant:
- IRLML5203TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
2,75 €
(TVA exclue)
3,33 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 230 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,275 € | 2,75 € |
| 100 - 240 | 0,262 € | 2,62 € |
| 250 + | 0,22 € | 2,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 784-0325
- Référence fabricant:
- IRLML5203TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 165mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 1.25W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Width | 1.4mm | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 165mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 1.25W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Width 1.4mm | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 3A Maximum Continuous Drain Current, 30V Maximum Drain Source Voltage - IRLML5203TRPBF
This MOSFET is a high-performance power device suitable for a range of applications in the electronics sector. Featuring a compact SOT-23 package, this P-channel device provides significant efficiency with a maximum continuous drain current of 3A and a drain-source voltage of 30V. With dimensions of 3.04mm in length, 1.4mm in width, and 1.02mm in height, it is well-suited for space-constrained designs.
Features & Benefits
• Capable of 30V drain-source voltage for versatile use
• Designed for surface mount for simplified PCB design
• Operates within a temperature range of -55°C to +150°C
• Utilises enhancement mode for reliable switching performance
Applications
• Utilised in battery management systems for optimal performance
• Used in portable electronics due to low-profile design
• Applied in load management solutions across various devices
• Suitable for advanced automation control systems
What is the significance of the low Rds(on) in this device?
The low Rds(on) ensures reduced power loss during operation, which enhances overall efficiency and maintains lower thermal levels in applications.
How does the power dissipation capability impact device performance?
The capability to dissipate up to 1.25W allows for effective heat management, ensuring the device operates reliably even under maximum load conditions without thermal failure.
What factors influence the selection of this MOSFET for a specific application?
Factors such as maximum continuous drain current, voltage ratings, and thermal characteristics should be considered to ensure compatibility with circuit requirements and performance expectations.
Liens connexes
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