Références fabricant

Infineon OptiMOS™ 5 N-Channel MOSFET, 45 A, 60 V, 3-Pin TO-220 IPP060N06NAKSA1

N° de stock RS:: 892-2276
Référence fabricant:: IPP060N06NAKSA1
Fabricant:: Infineon

Infineon OptiMOS™ 5 N-Channel MOSFET, 45 A, 60 V, 3-Pin TO-220 IPP060N06NAKSA1

Offre groupée disponible

Sous-total (1 paquet de 10 unités)*

12,31 €

(TVA exclue)

14,90 €

(TVA incluse)

Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard

Unité	Prix par unité	le paquet*
10 - 40	1,231 €	12,31 €
50 - 90	1,171 €	11,71 €
100 - 240	1,12 €	11,20 €
250 - 490	1,07 €	10,70 €
500 +	0,996 €	9,96 €

*Prix donné à titre indicatif

N° de stock RS:: 892-2276
Référence fabricant:: IPP060N06NAKSA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	45 A
	Maximum Drain Source Voltage	60 V
	Series	OptiMOS™ 5
	Package Type	TO-220
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	9 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.3V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	83 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	4.57mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	27 nC @ 10 V
	Length	10.36mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C
	Height	15.95mm

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Maximum Continuous Drain Current 45 A
	Maximum Drain Source Voltage 60 V
	Series OptiMOS™ 5
	Package Type TO-220
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 9 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.3V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 83 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 4.57mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 27 nC @ 10 V
	Length 10.36mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C
	Height 15.95mm

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS™ 5 N-Channel MOSFET, 45 A, 60 V, 3-Pin TO-220 IPP060N06NAKSA1

Infineon OptiMOS™5 Power MOSFETs

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