Infineon OptiMOS™ 3 N-Channel MOSFET, 50 A, 60 V, 3-Pin DPAK IPD088N06N3GBTMA1
- N° de stock RS:
- 827-5081
- Référence fabricant:
- IPD088N06N3GBTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
18,775 €
(TVA exclue)
22,725 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 100 | 0,751 € | 18,78 € |
| 125 - 475 | 0,579 € | 14,48 € |
| 500 - 1225 | 0,517 € | 12,93 € |
| 1250 + | 0,406 € | 10,15 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 827-5081
- Référence fabricant:
- IPD088N06N3GBTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DPAK (TO-252) | |
| Series | OptiMOS™ 3 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 8.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 71 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 36 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Height | 2.41mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK (TO-252) | ||
Series OptiMOS™ 3 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 8.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 71 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 36 nC @ 10 V | ||
Transistor Material Si | ||
Width 6.22mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Height 2.41mm | ||
Minimum Operating Temperature -55 °C | ||
Statut RoHS non applicable
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