Infineon OptiMOS™ 2 N-Channel MOSFET, 100 A, 100 V, 3-Pin TO-220 IPP05CN10NGXKSA1
- N° de stock RS:
- 165-8135
- Référence fabricant:
- IPP05CN10NGXKSA1
- Fabricant:
- Infineon
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau en stock, il n'est plus vendu par le fabricant.
- N° de stock RS:
- 165-8135
- Référence fabricant:
- IPP05CN10NGXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-220 | |
| Series | OptiMOS™ 2 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 5.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.36mm | |
| Typical Gate Charge @ Vgs | 136 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.57mm | |
| Number of Elements per Chip | 1 | |
| Height | 15.95mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-220 | ||
Series OptiMOS™ 2 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 5.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.36mm | ||
Typical Gate Charge @ Vgs 136 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Width 4.57mm | ||
Number of Elements per Chip 1 | ||
Height 15.95mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
- Pays d'origine :
- MY
Liens connexes
- Infineon OptiMOS™ 3 N-Channel MOSFET 120 V, 3-Pin TO-220 IPP048N12N3GXKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET 80 V, 3-Pin TO-220 FP IPA028N08N3GXKSA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 60 V, 3-Pin TO-220 IPP060N06NAKSA1
- Infineon Single OptiMOS™ 3 1 Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220 IPP126N10N3GXKSA1
- Infineon OptiMOS™-T N-Channel MOSFET 100 V, 3-Pin I2PAK IPI50N10S3L16AKSA1
- Infineon OptiMOS™ N-Channel MOSFET 75 V, 3-Pin I2PAK IPI100N08S207AKSA1
- Infineon OptiMOS™ 3 N-Channel MOSFET Transistor 30 V, 3-Pin TO-220 IPP096N03L G
- Infineon Single OptiMOS™ 3 1 Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220 IPP100N08N3GXKSA1
