Infineon Isolated OptiMOS 2 2 Type N-Channel MOSFET, 950 mA, 20 V Enhancement, 6-Pin SC-88
- N° de stock RS:
- 827-0115
- Référence fabricant:
- BSD235NH6327XTSA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 250 unités)*
40,50 €
(TVA exclue)
49,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 8 250 unité(s) expédiée(s) à partir du 05 janvier 2026
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 250 + | 0,162 € | 40,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 827-0115
- Référence fabricant:
- BSD235NH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 950mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Series | OptiMOS 2 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 0.32nC | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 0.8mm | |
| Length | 2mm | |
| Width | 1.25 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 950mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Series OptiMOS 2 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 0.32nC | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 0.8mm | ||
Length 2mm | ||
Width 1.25 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS™2 Power MOSFET Family
Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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