onsemi Isolated PowerTrench 2 Type N, Type N-Channel MOSFET, 1.2 A, 20 V Enhancement, 6-Pin SOT-363 FDG1024NZ

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N° de stock RS:
864-8142
Référence fabricant:
FDG1024NZ
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type N, Type N

Maximum Continuous Drain Current Id

1.2A

Maximum Drain Source Voltage Vds

20V

Series

PowerTrench

Package Type

SOT-363

Mount Type

Surface, Surface Mount

Pin Count

6

Maximum Drain Source Resistance Rds

259mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

360mW

Forward Voltage Vf

0.7V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

1.8nC

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Length

2mm

Height

1mm

Width

1.25 mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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