onsemi PowerTrench Dual N-Channel MOSFET, 1.2 A, 20 V, 6-Pin SOT-363 FDG1024NZ

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N° de stock RS:
864-8142
Référence fabricant:
FDG1024NZ
Fabricant:
onsemi
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Marque

onsemi

Channel Type

N

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

20 V

Series

PowerTrench

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

259 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

300 mW, 360 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Length

2mm

Width

1.25mm

Transistor Material

Si

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

1.8 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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