Infineon OptiMOS™ -T2 P-Channel MOSFET, 70 A, 40 V, 3-Pin DPAK IPD70P04P4L08ATMA1

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Informations sur le stock actuellement non accessibles
N° de stock RS:
857-4613
Référence fabricant:
IPD70P04P4L08ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

P

Maximum Continuous Drain Current

70 A

Maximum Drain Source Voltage

40 V

Package Type

DPAK (TO-252)

Series

OptiMOS™ -T2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

75 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Transistor Material

Si

Length

6.73mm

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

71 nC @ 10 V

Minimum Operating Temperature

-55 °C

Height

2.41mm

Statut RoHS non applicable

Infineon OptiMOS™ T2 Power MOSFETs


Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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