Name: Infineon OptiMOS™ -T2 N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90N03S4L03ATMA1
Brand: Infineon
SKU: 166-1127
Price: 0.66 EUR
Availability: InStock

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	90 A
	Maximum Drain Source Voltage	30 V
	Package Type	DPAK (TO-252)
	Series	OptiMOS™ -T2
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	4.4 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	94 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-16 V, +16 V
	Number of Elements per Chip	1
	Width	6.22mm
	Length	6.5mm
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	60 nC @ 10 V
	Transistor Material	Si
	Height	2.3mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Maximum Continuous Drain Current 90 A
	Maximum Drain Source Voltage 30 V
	Package Type DPAK (TO-252)
	Series OptiMOS™ -T2
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 4.4 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 94 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -16 V, +16 V
	Number of Elements per Chip 1
	Width 6.22mm
	Length 6.5mm
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 60 nC @ 10 V
	Transistor Material Si
	Height 2.3mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V

Statut RoHS non applicable

Pays d'origine :: MY

Infineon OptiMOS™ T2 Power MOSFETs

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
AEC qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green Product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS™ -T2 N-Channel MOSFET, 90 A, 30 V, 3-Pin DPAK IPD90N03S4L03ATMA1

Infineon OptiMOS™ T2 Power MOSFETs

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