Infineon HEXFET Type P-Channel MOSFET, 6.9 A, 20 V Enhancement, 6-Pin TSOP IRLTS2242TRPBF
- N° de stock RS:
- 830-3401
- Référence fabricant:
- IRLTS2242TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 30 unités)*
9,09 €
(TVA exclue)
11,01 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 6 840 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 30 - 120 | 0,303 € | 9,09 € |
| 150 - 270 | 0,234 € | 7,02 € |
| 300 - 720 | 0,218 € | 6,54 € |
| 750 - 1470 | 0,203 € | 6,09 € |
| 1500 + | 0,136 € | 4,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 830-3401
- Référence fabricant:
- IRLTS2242TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | HEXFET | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 55mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2W | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Width | 1.75 mm | |
| Height | 1.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series HEXFET | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 55mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2W | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Length 3mm | ||
Standards/Approvals No | ||
Width 1.75 mm | ||
Height 1.3mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
P-Channel Power MOSFET 12V to 20V, Infineon
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