Infineon HEXFET Type N-Channel MOSFET, 161 A, 30 V Enhancement, 3-Pin TO-252 IRLR7843TRPBF
- N° de stock RS:
- 830-3382
- Numéro d'article Distrelec:
- 304-37-849
- Référence fabricant:
- IRLR7843TRPBF
- Fabricant:
- Infineon
Sous-total (1 paquet de 10 unités)*
12,32 €
(TVA exclue)
14,91 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 10 unité(s) prête(s) à être expédiée(s)
- Plus 30 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 13 320 unité(s) expédiée(s) à partir du 04 septembre 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 + | 1,232 € | 12,32 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 830-3382
- Numéro d'article Distrelec:
- 304-37-849
- Référence fabricant:
- IRLR7843TRPBF
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 161A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Power Dissipation Pd | 140W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 161A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Power Dissipation Pd 140W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Width 6.22mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 161A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRLR7843TRPBF
Features & Benefits
Applications
What are the typical thermal performance characteristics?
How does the low RDS(on) affect overall circuit design?
Can it handle Pulse currents effectively?
What mounting methods are compatible with this component?
Is it suitable for use in automotive applications?
Liens connexes
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