Infineon HEXFET N-Channel Automotive MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252
- N° de stock RS:
- 165-5835
- Référence fabricant:
- IRFR4105ZTRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 2000 unités)*
910,00 €
(TVA exclue)
1 102,00 €
(TVA incluse)
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 2000 - 2000 | 0,455 € | 910,00 € |
| 4000 + | 0,432 € | 864,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-5835
- Référence fabricant:
- IRFR4105ZTRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | Automotive MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 120W | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | Automotive (Q101) | |
| Width | 6.22mm | |
| Height | 2.39mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type Automotive MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 120W | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals Automotive (Q101) | ||
Width 6.22mm | ||
Height 2.39mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRFR4105ZTRPBF
This MOSFET is designed for high efficiency and reliAbility across a variety of electronic applications. It is essential for voltage regulation and switching, meeting the needs of automation, electronics, and electrical engineering sectors with its robust performance. The device's low on-resistance and Ability to handle high continuous drain currents enable its use in demanding environments.
Features & Benefits
• Maximum continuous drain current of 30A ensures strong performance
• Operates at a maximum drain-source voltage of 55V for high voltage applications
• Low RDS(on) of 24.5mΩ improves energy efficiency
• Withstands temperature fluctuations up to +175°C
• Enhancement mode technology provides dependable switched operation
• DPAK TO-252 package allows for easy surface mounting
Applications
• Power management systems for effective voltage regulation
• Motor drivers and power converters in automation
• Switching power supplies and inverters
• Consumer electronics requiring efficient power control
What is the maximum gate threshold voltage?
The maximum gate threshold voltage is 4V, allowing for optimal gate control in switching applications.
Can it handle high temperatures?
Yes, this MOSFET operates efficiently at temperatures ranging from -55°C to +175°C, suitable for challenging environments.
Is this MOSFET suitable for surface mounting?
Yes, it comes in a DPAK TO-252 package designed for straightforward surface mount integration.
How does it compare with other MOSFETs in terms of power dissipation?
The maximum power dissipation capacity is 48W, enabling it to manage substantial loads effectively.
What types of applications are most compatible with this component?
It is particularly effective in applications requiring high efficiency, including motor control, power converters, and electrical systems in automation.
Liens connexes
- Infineon HEXFET N-Channel Automotive MOSFET 55 V Enhancement, 3-Pin TO-252 IRFR4105ZTRPBF
- Infineon HEXFET N-Channel Automotive MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252