Infineon HEXFET Type N-Channel MOSFET & Diode, 86 A, 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRLPBF

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Sous-total (1 paquet de 20 unités)*

15,62 €

(TVA exclue)

18,90 €

(TVA incluse)

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  • Plus 1 160 unité(s) expédiée(s) à partir du 02 janvier 2026
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Unité
Prix par unité
le paquet*
20 - 800,781 €15,62 €
100 - 1800,742 €14,84 €
200 - 4800,711 €14,22 €
500 - 9800,679 €13,58 €
1000 +0,633 €12,66 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
220-7496
Référence fabricant:
IRFR3709ZTRLPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

30V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

79W

Typical Gate Charge Qg @ Vgs

26nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

2.39 mm

Length

6.73mm

Height

6.22mm

Automotive Standard

No

The Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.

Industry-leading quality

Low RDS(ON) at 4.5V VGS

Fully Characterized Avalanche Voltage and Current

Ultra-Low Gate Impedance

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