Infineon HEXFET N-Channel MOSFET, 161 A, 30 V Enhancement, 3-Pin TO-252 IRLR7843TRPBF

N° de stock RS:: 165-5923
Référence fabricant:: IRLR7843TRPBF
Fabricant:: Infineon

Infineon HEXFET N-Channel MOSFET, 161 A, 30 V Enhancement, 3-Pin TO-252 IRLR7843TRPBF

Sous-total (1 bobine de 2000 unités)*

734,00 €

(TVA exclue)

888,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Plus 12 000 unité(s) expédiée(s) à partir du 12 octobre 2026

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Unité	Prix par unité	la bobine*
2000 +	0,367 €	734,00 €

*Prix donné à titre indicatif

N° de stock RS:: 165-5923
Référence fabricant:: IRLR7843TRPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	161A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Maximum Power Dissipation Pd	140W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	34nC
	Maximum Operating Temperature	175°C
	Height	2.39mm
	Length	6.73mm
	Standards/Approvals	No
	Width	6.22mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 161A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs -20V, +20V
	Maximum Power Dissipation Pd 140W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 34nC
	Maximum Operating Temperature 175°C
	Height 2.39mm
	Length 6.73mm
	Standards/Approvals No
	Width 6.22mm
	Automotive Standard No

Pays d'origine :: CN

Infineon HEXFET Series MOSFET, 161A Maximum Continuous Drain Current, 140W Maximum Power Dissipation - IRLR7843TRPBF

This MOSFET is tailored for high-performance applications in the electrical and electronics sectors, especially suitable for automotive and industrial needs. Its HEXFET technology ensures impressive efficiency and reliability, making it Ideal for high-frequency synchronous buck converters and isolated DC-DC converters. The device effectively manages power dissipation, enhancing the performance of electronic systems.

Features & Benefits

• Extremely low RDS(on) optimises power loss and efficiency

• High continuous drain current rating supports intensive applications

• Designed for high operating temperatures to ensure performance

• Lead-free construction meets environmentally conscious design standards

• Low gate charge improves switching behaviour in circuits

Applications

• Used in high-frequency synchronous buck converters

• Employed in isolated DC-DC converters for telecom systems

• Serves automotive power management systems

• Suitable for industrial power supplies requiring enhanced efficiency

• Ideal for power regulation in computer processors

What are the typical thermal performance characteristics?

The maximum operating temperature is +175°C with a thermal resistance of 50°C/W from junction to ambient, ensuring effective performance in thermal environments.

How does the low RDS(on) affect overall circuit design?

Low RDS(on) reduces conduction losses, leading to improved efficiency under varying load conditions, which is Crucial for high-performance designs.

Can it handle Pulse currents effectively?

Yes, it can accommodate pulsed drain currents of up to 620 A, ensuring operational reliability under dynamic loads.

What mounting methods are compatible with this component?

As a surface mount component in DPAK package, it is suitable for automated assembly processes.

Is it suitable for use in automotive applications?

Yes, its specifications, including a maximum drain-source voltage rating of 30V, make it fitting for automotive power systems.