Infineon HEXFET N-Channel MOSFET, 160 A, 30 V Enhancement, 3-Pin TO-252 IRLR8743PBF
- N° de stock RS:
- 166-0945
- Référence fabricant:
- IRLR8743PBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 75 unités)*
44,55 €
(TVA exclue)
53,93 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 11 janvier 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 75 - 75 | 0,594 € | 44,55 € |
| 150 - 300 | 0,486 € | 36,45 € |
| 375 - 675 | 0,48 € | 36,00 € |
| 750 - 1425 | 0,474 € | 35,55 € |
| 1500 + | 0,468 € | 35,10 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 166-0945
- Référence fabricant:
- IRLR8743PBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 135W | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.39mm | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 135W | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Operating Temperature 175°C | ||
Height 2.39mm | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 160A Maximum Continuous Drain Current, 135W Maximum Power Dissipation - IRLR8743TRPBF
This MOSFET is designed for high-performance applications in the automation and electronics sectors. Utilising HEXFET technology, it achieves significant efficiency and reliAbility in power management. Its Ability to handle high continuous drain currents makes it suitable for a variety of industrial settings.
Features & Benefits
• Handles a maximum continuous drain current of 160A for solid performance
• Offers a maximum drain-source voltage of 30V for dependable operation
• Low Rds(on) Value of 3.9mΩ minimises power losses
• Designed as an enhancement mode transistor to improve switching efficiency
• Surface mount capabilities allow for easy integration into circuit designs
• Rated for high operating temperatures up to +175°C for improved thermal management
Applications
• High frequency synchronous buck converters in computer power supplies
• Isolated DC-DC converters in telecom systems
• Industrial power management and automation systems
• Devices requiring low gate threshold voltages for efficient switching
• Various electronic devices that demand a Compact power solution
What is the impact of high temperatures on its performance?
Operating at elevated temperatures enhances its thermal performance, allowing it to manage high power levels effectively while ensuring stability in difficult conditions.
How does this technology improve efficiency in electronic devices?
The HEXFET technology significantly reduces power losses due to its low Rds(on), allowing devices to operate efficiently under high loads while generating less heat.
Can it be used in conjunction with other semiconductors?
Yes, it can be integrated with other semiconductor components in mixed-signal circuits, enhancing overall circuit functionality and performance.
What is the significance of its surface mount design?
The surface mount design supports Compact assembly on PCBs, enhances thermal management, and optimises space in electronic applications.
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Liens connexes
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