Infineon HEXFET N-Channel MOSFET, 5.2 A, 55 V Enhancement, 4-Pin SOT-223 IRLL2705TRPBF
- N° de stock RS:
- 830-3304
- Numéro d'article Distrelec:
- 304-44-474
- Référence fabricant:
- IRLL2705TRPBF
- Fabricant:
- Infineon
Sous-total (1 paquet de 20 unités)*
15,68 €
(TVA exclue)
18,98 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Plus 240 unité(s) expédiée(s) à partir du 31 octobre 2026
- Plus 100 unité(s) expédiée(s) à partir du 06 novembre 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 0,784 € | 15,68 € |
| 100 - 180 | 0,604 € | 12,08 € |
| 200 - 480 | 0,564 € | 11,28 € |
| 500 - 980 | 0,526 € | 10,52 € |
| 1000 + | 0,486 € | 9,72 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 830-3304
- Numéro d'article Distrelec:
- 304-44-474
- Référence fabricant:
- IRLL2705TRPBF
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.1W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -16V, +16V | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Height | 1.739mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.1W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -16V, +16V | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Operating Temperature 150°C | ||
Width 3.7mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Height 1.739mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 5.2A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL2705TRPBF
Features & Benefits
Applications
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