Infineon HEXFET N-Channel MOSFET, 5.2 A, 55 V Enhancement, 4-Pin SOT-223 IRLL2705TRPBF
- N° de stock RS:
- 830-3304
- Numéro d'article Distrelec:
- 304-44-474
- Référence fabricant:
- IRLL2705TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 20 unités)*
15,68 €
(TVA exclue)
18,98 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Stock limité
- 240 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 100 unité(s) expédiée(s) à partir du 16 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 0,784 € | 15,68 € |
| 100 - 180 | 0,604 € | 12,08 € |
| 200 - 480 | 0,564 € | 11,28 € |
| 500 - 980 | 0,526 € | 10,52 € |
| 1000 + | 0,486 € | 9,72 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 830-3304
- Numéro d'article Distrelec:
- 304-44-474
- Référence fabricant:
- IRLL2705TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | SOT-223 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.1W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -16V, +16V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.7mm | |
| Height | 1.739mm | |
| Standards/Approvals | No | |
| Length | 6.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type SOT-223 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.1W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -16V, +16V | ||
Maximum Operating Temperature 150°C | ||
Width 3.7mm | ||
Height 1.739mm | ||
Standards/Approvals No | ||
Length 6.7mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 5.2A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL2705TRPBF
This high-performance MOSFET is designed for efficient power management across various applications. With an N-channel configuration, it provides excellent switching capabilities, making it suitable for tasks that require quick response and minimised energy loss. This component enhances the efficiency and reliability of electronic circuits, especially in automation and control systems.
Features & Benefits
• Maximum continuous drain current of 5.2A
• Drain-source voltage rating of 55V
• Low Rds(on) of 65mΩ for efficient operation
• Compact SOT-223 package for space-saving designs
Applications
• Ideal for power supply circuits
• Utilised in automotive power management systems
• Commonly employed for switching in high-frequency circuits
• Integrates well in power inverters for renewable energy systems
What is the maximum voltage this component can handle?
The product supports a maximum drain-source voltage of 55V, allowing for robust performance in various applications.
Can it operate at high temperatures?
Yes, it is rated for a maximum operating temperature of +150°C, ensuring reliability in challenging environments.
How does this component manage heat during operation?
With a maximum power dissipation of 2.1W, it effectively manages thermal performance, reducing the risk of overheating.
Is it compatible with standard PCB designs?
This component is suitable for surface mount technology, enabling easy integration into standard PCB layouts.
What makes this a suitable choice for automation projects?
Its Rapid switching capability and low on-resistance contribute to significant energy savings, enhancing the efficiency of automated systems.
Liens connexes
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223 IRLL2705TRPBF
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223 IRFL4105TRPBF
- Infineon OptiMOS N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-223
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223 IRFL024NTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223 IRFL024ZTRPBF
- Infineon HEXFET N-Channel MOSFET 55 V Enhancement, 4-Pin SOT-223 IRLL014NTRPBF