Infineon HEXFET Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 4-Pin SOT-223
- N° de stock RS:
- 165-5885
- Référence fabricant:
- IRFL4105TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 bobine de 2500 unités)*
690,00 €
(TVA exclue)
835,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 30 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 - 2500 | 0,276 € | 690,00 € |
| 5000 + | 0,262 € | 655,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 165-5885
- Référence fabricant:
- IRFL4105TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.2A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 3.7mm | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.2A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 2.1W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 3.7mm | ||
Length 6.7mm | ||
Height 1.8mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MY
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