Infineon HEXFET Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 4-Pin SOT-223

N° de stock RS:: 168-8747
Référence fabricant:: IRLL2705TRPBF
Fabricant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 5.2 A, 55 V Enhancement, 4-Pin SOT-223

Offre groupée disponible

Sous-total (1 bobine de 2500 unités)*

855,00 €

(TVA exclue)

1 035,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

Temporairement en rupture de stock

Expédition à partir du 20 mars 2026

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Unité	Prix par unité	la bobine*
2500 - 2500	0,342 €	855,00 €
5000 +	0,325 €	812,50 €

*Prix donné à titre indicatif

N° de stock RS:: 168-8747
Référence fabricant:: IRLL2705TRPBF
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	5.2A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	65mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	2.1W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	16 V
	Typical Gate Charge Qg @ Vgs	32nC
	Maximum Operating Temperature	150°C
	Height	1.739mm
	Width	3.7 mm
	Length	6.7mm
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 5.2A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 65mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 2.1W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 16 V
	Typical Gate Charge Qg @ Vgs 32nC
	Maximum Operating Temperature 150°C
	Height 1.739mm
	Width 3.7 mm
	Length 6.7mm
	Standards/Approvals No
	Automotive Standard No

Pays d'origine :: MY

Infineon HEXFET Series MOSFET, 5.2A Maximum Continuous Drain Current, 2.1W Maximum Power Dissipation - IRLL2705TRPBF

This high-performance MOSFET is designed for efficient power management across various applications. With an N-channel configuration, it provides excellent switching capabilities, making it suitable for tasks that require quick response and minimised energy loss. This component enhances the efficiency and reliability of electronic circuits, especially in automation and control systems.

Features & Benefits

• Maximum continuous drain current of 5.2A

• Drain-source voltage rating of 55V

• Low Rds(on) of 65mΩ for efficient operation

• Compact SOT-223 package for space-saving designs

Applications

• Ideal for power supply circuits

• Utilised in automotive power management systems

• Commonly employed for switching in high-frequency circuits

• Integrates well in power inverters for renewable energy systems

What is the maximum voltage this component can handle?

The product supports a maximum drain-source voltage of 55V, allowing for robust performance in various applications.

Can it operate at high temperatures?

Yes, it is rated for a maximum operating temperature of +150°C, ensuring reliability in challenging environments.

How does this component manage heat during operation?

With a maximum power dissipation of 2.1W, it effectively manages thermal performance, reducing the risk of overheating.

Is it compatible with standard PCB designs?

This component is suitable for surface mount technology, enabling easy integration into standard PCB layouts.

What makes this a suitable choice for automation projects?

Its Rapid switching capability and low on-resistance contribute to significant energy savings, enhancing the efficiency of automated systems.