Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V Enhancement, 3-Pin TO-252 IRFR5305TRPBF
- N° de stock RS:
- 827-4060
- Numéro d'article Distrelec:
- 304-44-464
- Référence fabricant:
- IRFR5305TRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 20 unités)*
18,92 €
(TVA exclue)
22,90 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 180 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 2 520 unité(s) expédiée(s) à partir du 04 septembre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 0,946 € | 18,92 € |
| 100 - 180 | 0,898 € | 17,96 € |
| 200 - 480 | 0,862 € | 17,24 € |
| 500 - 980 | 0,804 € | 16,08 € |
| 1000 + | 0,756 € | 15,12 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 827-4060
- Numéro d'article Distrelec:
- 304-44-464
- Référence fabricant:
- IRFR5305TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.3V | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Height | 2.39mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.3V | ||
Maximum Operating Temperature 175°C | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Height 2.39mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFR5305TRPBF
This MOSFET offers advanced performance for various electronic applications. Its low on-resistance and high current handling capabilities contribute to effective power management. With a robust design and reliable electrical characteristics, this component is suitable for various environments in automation and electronic systems.
Features & Benefits
• Achieves low on-resistance for enhanced efficiency
• Supports a maximum continuous drain current of 31A
• Designed for ease of use in surface mount applications
• Capable of operating within a temperature range of -55°C to +175°C
• Facilitates quick switching speeds for improved performance
• Allows a maximum power dissipation of 110W for diverse applications
Applications
• Utilised in power management systems
• Suitable for motor control
• Employed in switching power supplies for electronic devices
• Used in automotive circuits for improved efficiency
What are the recommended soldering techniques for installation?
Use vapour phase, infrared, or wave soldering techniques for optimal results, ensuring minimal thermal stress on the component.
Can it handle high temperature environments?
Yes, it operates effectively within a temperature range of -55°C to +175°C, making it appropriate for extreme conditions.
What is the significance of low RDS(on)?
Low RDS(on) reduces power losses, enhancing overall efficiency and decreasing heat generation during operation.
How do I ensure accurate switching behaviour?
Implement suitable gate drive circuits to achieve precise turn-on and turn-off characteristics, following the suggested trigger voltages.
Is this compatible with standard PCB layouts?
Yes, it is designed in DPAK packaging, enabling straightforward integration into typical PCB designs without the need for special modifications.
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