Références fabricant

Infineon HEXFET N-Channel MOSFET, 104 A, 150 V, 3-Pin TO-220AB IRFB4115GPBF

N° de stock RS:: 827-3953
Référence fabricant:: IRFB4115GPBF
Fabricant:: Infineon

Infineon HEXFET N-Channel MOSFET, 104 A, 150 V, 3-Pin TO-220AB IRFB4115GPBF

Indisponible

RS n'aura plus ce produit en stock.

N° de stock RS:: 827-3953
Référence fabricant:: IRFB4115GPBF
Fabricant:: Infineon

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	104 A
	Maximum Drain Source Voltage	150 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	11 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	380 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	77 nC @ 10 V
	Length	10.67mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Transistor Material	Si
	Width	4.83mm
	Minimum Operating Temperature	-55 °C
	Height	16.51mm

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Maximum Continuous Drain Current 104 A
	Maximum Drain Source Voltage 150 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 11 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 380 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 77 nC @ 10 V
	Length 10.67mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Transistor Material Si
	Width 4.83mm
	Minimum Operating Temperature -55 °C
	Height 16.51mm

Infineon HEXFET N-Channel MOSFET, 104 A, 150 V, 3-Pin TO-220AB IRFB4115GPBF

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