Infineon HEXFET N-Channel MOSFET, 35 A, 150 V, 3-Pin TO-220AB IRFB4615PBF

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Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
165-7609
Référence fabricant:
IRFB4615PBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

N

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

150 V

Series

HEXFET

Package Type

TO-220AB

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

39 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

144 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Length

10.67mm

Typical Gate Charge @ Vgs

26 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Width

4.83mm

Height

9.02mm

Minimum Operating Temperature

-55 °C

Pays d'origine :
MX

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