Infineon OptiMOS N-Channel MOSFET, 1.2 A, 100 V Enhancement, 4-Pin SOT-223 BSP296NH6327XTSA1

N° de stock RS:: 826-9260
Numéro d'article Distrelec:: 304-44-413
Référence fabricant:: BSP296NH6327XTSA1
Fabricant:: Infineon

Infineon OptiMOS N-Channel MOSFET, 1.2 A, 100 V Enhancement, 4-Pin SOT-223 BSP296NH6327XTSA1

Sous-total (1 paquet de 50 unités)*

31,90 €

(TVA exclue)

38,60 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

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Unité	Prix par unité	le paquet*
50 +	0,638 €	31,90 €

*Prix donné à titre indicatif

N° de stock RS:: 826-9260
Numéro d'article Distrelec:: 304-44-413
Référence fabricant:: BSP296NH6327XTSA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	1.2A
	Maximum Drain Source Voltage Vds	100V
	Package Type	SOT-223
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	800mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	-20V, +20V
	Forward Voltage Vf	0.85V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	4.5nC
	Maximum Power Dissipation Pd	1.8W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	3.5mm
	Length	6.5mm
	Height	1.6mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 1.2A
	Maximum Drain Source Voltage Vds 100V
	Package Type SOT-223
	Series OptiMOS
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 800mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs -20V, +20V
	Forward Voltage Vf 0.85V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 4.5nC
	Maximum Power Dissipation Pd 1.8W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 3.5mm
	Length 6.5mm
	Height 1.6mm
	Automotive Standard AEC-Q101

Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 1.2A Maximum Continuous Drain Current - BSP296NH6327XTSA1

This MOSFET is a surface-mount power transistor designed for switching and control in automotive and industrial contexts. It operates as an N‑channel enhancement device suitable for applications requiring moderate current handling and high-voltage capability, while withstanding a broad ambient temperature range for demanding environments.

Features and Benefits:

• 100V drain-source rating enables high-voltage switching
• 1.2A continuous drain current supports modest load currents
• 800 mΩ Rds(on) reduces conduction losses under load
• 4.5 nC typical gate charge allows faster switching transitions
• 1.8W maximum power dissipation manages thermal load in compact assemblies
• ±20V gate tolerance supports common gate-drive voltages

Applications

• Suitable for automotive control modules requiring AEC‑Q101 qualification
• Ideal for DC/DC converter stages in compact power supplies
• Used with low-power motor drivers in auxiliary systems
• Can be used for battery management and power distribution tasks
• Useful in switch‑mode regulation for portable and embedded equipment

What package type should I expect for PCB layout considerations?

It is supplied in a SOT‑223 surface‑mount package with four pins, allowing single‑sided thermal conduction and straightforward through‑board footprint integration.

How does thermal performance behave at elevated temperatures?

The device is rated to operate across a wide range from -55 °C to 150 °C, with power dissipation limited to 1.8W to prevent thermal overstress under continuous operation.

What gate‑drive constraints must be observed during design?

The maximum allowable gate‑source voltage is 20V, so gate drivers should be configured to avoid exceeding this level to protect the gate oxide.

Which parameter most affects switching efficiency in fast PWM applications?

The typical gate charge of 4.5 nC directly influences switching losses and drive‑energy requirements during rapid state changes.