Infineon OptiMOS Type N-Channel MOSFET, 1.2 A, 100 V Enhancement, 4-Pin SOT-223

N° de stock RS:: 124-8756
Référence fabricant:: BSP296NH6327XTSA1
Fabricant:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 1.2 A, 100 V Enhancement, 4-Pin SOT-223

Visuel non contractuel

Sous-total (1 bobine de 1000 unités)*

251,00 €

(TVA exclue)

304,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

1 000 unité(s) expédiée(s) à partir du 03 septembre 2026

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Unité	Prix par unité	la bobine*
1000 +	0,251 €	251,00 €

*Prix donné à titre indicatif

N° de stock RS:: 124-8756
Référence fabricant:: BSP296NH6327XTSA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	1.2A
	Maximum Drain Source Voltage Vds	100V
	Series	OptiMOS
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	800mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	4.5nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.8W
	Forward Voltage Vf	0.85V
	Maximum Operating Temperature	150°C
	Length	6.5mm
	Height	1.6mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 1.2A
	Maximum Drain Source Voltage Vds 100V
	Series OptiMOS
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 800mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 4.5nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.8W
	Forward Voltage Vf 0.85V
	Maximum Operating Temperature 150°C
	Length 6.5mm
	Height 1.6mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Pays d'origine :: CN

Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 1.2A Maximum Continuous Drain Current - BSP296NH6327XTSA1

This MOSFET is a surface-mount power transistor designed for switching and control in automotive and industrial contexts. It operates as an N‑channel enhancement device suitable for applications requiring moderate current handling and high-voltage capability, while withstanding a broad ambient temperature range for demanding environments.

Features and Benefits:

• 100V drain-source rating enables high-voltage switching
• 1.2A continuous drain current supports modest load currents
• 800 mΩ Rds(on) reduces conduction losses under load
• 4.5 nC typical gate charge allows faster switching transitions
• 1.8W maximum power dissipation manages thermal load in compact assemblies
• ±20V gate tolerance supports common gate-drive voltages

Applications

• Suitable for automotive control modules requiring AEC‑Q101 qualification
• Ideal for DC/DC converter stages in compact power supplies
• Used with low-power motor drivers in auxiliary systems
• Can be used for battery management and power distribution tasks
• Useful in switch‑mode regulation for portable and embedded equipment

What package type should I expect for PCB layout considerations?

It is supplied in a SOT‑223 surface‑mount package with four pins, allowing single‑sided thermal conduction and straightforward through‑board footprint integration.

How does thermal performance behave at elevated temperatures?

The device is rated to operate across a wide range from -55 °C to 150 °C, with power dissipation limited to 1.8W to prevent thermal overstress under continuous operation.

What gate‑drive constraints must be observed during design?

The maximum allowable gate‑source voltage is 20V, so gate drivers should be configured to avoid exceeding this level to protect the gate oxide.

Which parameter most affects switching efficiency in fast PWM applications?

The typical gate charge of 4.5 nC directly influences switching losses and drive‑energy requirements during rapid state changes.