Infineon OptiMOS Type N-Channel MOSFET, 1.8 A, 100 V Enhancement, 4-Pin SOT-223 BSP372NH6327XTSA1
- N° de stock RS:
- 110-7754
- Numéro d'article Distrelec:
- 304-36-977
- Référence fabricant:
- BSP372NH6327XTSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 50 unités)*
35,70 €
(TVA exclue)
43,20 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 800 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 50 - 50 | 0,714 € | 35,70 € |
| 100 - 200 | 0,578 € | 28,90 € |
| 250 - 450 | 0,543 € | 27,15 € |
| 500 - 1200 | 0,507 € | 25,35 € |
| 1250 + | 0,464 € | 23,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 110-7754
- Numéro d'article Distrelec:
- 304-36-977
- Référence fabricant:
- BSP372NH6327XTSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SOT-223 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 270mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.8W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SOT-223 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 270mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.8W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 6.5mm | ||
Height 1.6mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET, 100V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP372NH6327XTSA1
This MOSFET is a surface‑mount switching transistor designed for use where compact, high‑voltage N‑channel control is required. It operates across a wide temperature range suitable for demanding environments and is intended for applications that need moderate continuous current with efficient switching behaviour.
Features and Benefits:
• 100V drain‑source capability supports high‑voltage circuits
• 270 mΩ low RDS(on) reduces conduction losses
• 1.8A continuous drain current for steady load handling
• 9.5 nC typical gate charge enables fast drive response
• 1.8W power dissipation manages thermal stress in SOT‑223
• 20V maximum gate drive allows flexible gate‑drive design
• 270 mΩ low RDS(on) reduces conduction losses
• 1.8A continuous drain current for steady load handling
• 9.5 nC typical gate charge enables fast drive response
• 1.8W power dissipation manages thermal stress in SOT‑223
• 20V maximum gate drive allows flexible gate‑drive design
Applications
• Suitable for automotive electronic subsystems requiring rugged parts
• Ideal for DC‑DC converters in compact power modules
• Used with motor drivers needing high‑voltage switching
• Can be used for battery management and charging circuits
• Used for general‑purpose switching in industrial control boards
• Ideal for DC‑DC converters in compact power modules
• Used with motor drivers needing high‑voltage switching
• Can be used for battery management and charging circuits
• Used for general‑purpose switching in industrial control boards
What package allows easy soldering and thermal transfer?
The device is supplied in a SOT‑223 surface‑mount package providing a balance of compact footprint and a larger tab for heat dissipation.
How does it cope with extreme ambient conditions?
It is specified to operate from -55 °C up to 150 °C, covering low‑temperature starts and high‑temperature operating scenarios.
What gate voltage limits should designers observe?
The gate‑to‑source voltage must not exceed ±20V to remain within safe operating bounds.
What type of channel and mode does it use?
It utilises an N‑channel enhancement‑mode topology designed for standard switching and control tasks.
Liens connexes
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- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23