ROHM SiC N-Channel MOSFET Transistor, 22 A, 1200 V, 3-Pin TO-247 SCT2160KEC

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
826-6908
Référence fabricant:
SCT2160KEC
Fabricant:
ROHM
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Marque

ROHM

Channel Type

N

Maximum Continuous Drain Current

22 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

226 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

165 W

Transistor Configuration

Single

Number of Elements per Chip

1

Length

15.9mm

Typical Gate Charge @ Vgs

62 nC @ 18 V

Transistor Material

SiC

Width

20.95mm

Maximum Operating Temperature

+175 °C

Height

5.03mm

N-Channel SiC MOSFET Transistors, ROHM


Silicon Carbide (SiC) MOSFETs feature lower switching losses and superior high temperature operating characteristics than their silicon counterparts and are ideally suited to high-efficiency high frequency switching applications.


MOSFET Transistors, ROHM Semiconductor

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